Improvement of TFT Electrical Characteristics by Optimization of Gate Insulating and Active Layer Deposition

TIAN Zong-min; CHEN Xu; XIE Zhen-yu; ZHANG Jin-zhong; ZHANG Wen-yu; CUI Zi-wei; GUO Jian; M

doi:10.3788/YJYXS20132806.0849

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Improvement of TFT Electrical Characteristics by Optimization of Gate Insulating and Active Layer Deposition

Material Physics & Chemistry | 更新时间：2020-08-12

- Improvement of TFT Electrical Characteristics by Optimization of Gate Insulating and Active Layer Deposition
- Chinese Journal of Liquid Crystals and Displays Vol. 28, Issue 6, Pages: 849-854(2013)
- 作者机构：
  
  北京京东方光电科技有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20132806.0849
  CLC： TN141.9
- Received：22 February 2013，
  
  Revised：08 March 2013，
  
  Published：15 December 2013
- 稿件说明：
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田宗民, 陈旭, 谢振宇, 张金中, 张文余, 崔子巍, 郭建, 闵泰烨. 栅极绝缘层和有源层沉积工艺的优化对TFT电学特性的改善[J]. 液晶与显示, 2013,28(6): 849-854

TIAN Zong-min, CHEN Xu, XIE Zhen-yu, ZHANG Jin-zhong, ZHANG Wen-yu, CUI Zi-wei, GUO Jian, MIN Tai-ye. Improvement of TFT Electrical Characteristics by Optimization of Gate Insulating and Active Layer Deposition[J]. , 2013,28(6): 849-854
田宗民, 陈旭, 谢振宇, 张金中, 张文余, 崔子巍, 郭建, 闵泰烨. 栅极绝缘层和有源层沉积工艺的优化对TFT电学特性的改善[J]. 液晶与显示, 2013,28(6): 849-854 DOI： 10.3788/YJYXS20132806.0849.

TIAN Zong-min, CHEN Xu, XIE Zhen-yu, ZHANG Jin-zhong, ZHANG Wen-yu, CUI Zi-wei, GUO Jian, MIN Tai-ye. Improvement of TFT Electrical Characteristics by Optimization of Gate Insulating and Active Layer Deposition[J]. , 2013,28(6): 849-854 DOI： 10.3788/YJYXS20132806.0849.

摘要

对低速沉积的栅极绝缘层和低速沉积的有源层的薄膜沉积条件进行了优化，设定4个实验条件，考察了不同条件下膜层的均匀性，TFT产品的开路电流（

）的整体分布规律以及均匀性，

的提升比例以及产品的阈值电压，确定条件二为最优条件。对比优化前后产品的栅极偏应力下TFT的转移曲线和高频信号下电容-电压曲线，进一步分析了产品的电学稳定性。研究发现

提升了42%，开关比（

off

）提升了约70%，优化后的TFT的稳定性优于优化之前，达到了改善TFT特性的目的。

Abstract

The deposition conditions were optimized for low speed deposition gate insulating layer (GL) and low speed deposition active layer(AL)

and four experimental conditions were established. The second condition was confirmed to be the optimization condition by analyzing the uniformity of the thickness

the overall distribution patterns and uniformity of

. The improvements of

and threshold voltage were investigated. To further investigate the stability of electrical characteristics

the TFT transfer curves under gate stress and the

C-V

curves under high-frequency signal were analyzed before and after optimization. It was found that the stability of optimized electrical characteristics for TFT was better.

was improved by 42% and the switching ratio (

off

) was improved by 70%.

关键词

Keywords

references

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