Effect of AlGaInP-LED Arrays Units Side-Reflection on Light Output Efficiency

BAO Xing-zhen; LIANG Jing-qiu; LIANG Zhong-zhu; TIAN Chao; QING Yu-xin; WANG Wei-biao

doi:10.3788/YJYXS20132805.0726

您当前的位置：

首页 >

文章列表页 >

Effect of AlGaInP-LED Arrays Units Side-Reflection on Light Output Efficiency

Device Physics & Device Technology | 更新时间：2020-08-12

- Effect of AlGaInP-LED Arrays Units Side-Reflection on Light Output Efficiency
- Chinese Journal of Liquid Crystals and Displays Vol. 28, Issue 5, Pages: 726-731(2013)
- 作者机构：
  
  1. 中国科学院大学北京,中国,100049
  2. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20132805.0726
  CLC： TN312+.8
- Received：22 April 2013，
  
  Revised：05 July 2013，
  
  Published：15 October 2013
- 稿件说明：
移动端阅览
包兴臻, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP-LED微阵列单元侧反射对出光效率的影响[J]. 液晶与显示, 2013,28(5): 726-731

BAO Xing-zhen, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QING Yu-xin, WANG Wei-biao. Effect of AlGaInP-LED Arrays Units Side-Reflection on Light Output Efficiency[J]. , 2013,28(5): 726-731
包兴臻, 梁静秋, 梁中翥, 田超, 秦余欣, 王维彪. AlGaInP-LED微阵列单元侧反射对出光效率的影响[J]. 液晶与显示, 2013,28(5): 726-731 DOI： 10.3788/YJYXS20132805.0726.

BAO Xing-zhen, LIANG Jing-qiu, LIANG Zhong-zhu, TIAN Chao, QING Yu-xin, WANG Wei-biao. Effect of AlGaInP-LED Arrays Units Side-Reflection on Light Output Efficiency[J]. , 2013,28(5): 726-731 DOI： 10.3788/YJYXS20132805.0726.

摘要

LED微阵列器件具有体积小、分辨率高、寿命长及耗能低等突出特点。出光效率是该器件的一项重要参数

文中对以AlGaInP外延片为基片的LED微阵列器件的出光效率进行了理论及实验研究。器件的像素周期设计为100

m100

发光单元间的上隔离沟槽宽度为20

m、深度为25

将在600~650 nm波段具有高反射率的均匀掺单晶硅纳米颗粒的聚酰亚胺作为复合材料来填充上隔离沟槽

将侧面出射的光反射到上表面

实现了相邻两个发光单元之间的光学和电学隔离。分析计算表明

通过填充硅纳米颗粒/聚酰亚胺复合膜材料

使每个发光单元侧面出射光的16.695%反射回窗口层

提高了出光效率。这项研究将有助于提高LED微阵列器件的出光效率。

Abstract

LED micro-arrays apparatus has many outstanding characteristics

such as small bulk

high resolving power

long life

low wear out power and so on. Lighting output efficiency is an important parameter. The text made theoretic and experiment study for LED micro-arrays apparatus on AlGaInP wafer. The arrays apparatus image sizes is 100

m100

m. Etching upper isolating groove with the deep width ratio was 25

m :20

m between adjacent light-emitting unit. Then filling the groove with mixed Si granule that has high reflect to 600~650 nm wave band into polyurethane. This hybrid materials can reflect lateral light to above surface

not only improve light efficiency of micro arrays apparatus

but also realize light and electric seclusion of two adjacent light-emitting unit. Theoretical calculation indicate that the multiple film can reflect each light-emitting unit the light of side-wall 16.695% to window layer

it improves lighting output efficiency availably. The study administers to the improvement of lighting output efficiency for LED micro-arrays apparatus.

关键词

Keywords

references

TU D W, WU R M,YANG H L,et al. Effect of optical structure on output light intensity distribution in LED package [J]. Optical and Precision Engineering, 2008, 16(5):832-838.[2] Schineller B, Junas Y, Heuken M, et al. Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode[J]. Materials Science and Engineering, 1988, B51:34-38.[3] Robinson Kevin. Blue LEDs open door to microdisplays [J]. Photonics Spectra,2001, 35:43-44.[4] Choin H W, Jeon C W, Dawson M D. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique [J]. J. Crystal Growth, 2004, 268:527-530.[5] Geib K M, Choquette K D, Serkland D K, et al. Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2002, 8(4):943-94.[6] Jin S X, Li J, Lin J Y, et al. InGaN/GaN quantum well interconnected micro disk light emitting diodes [J]. Appl. Phys. Lett, 2000, 77(20):3236-3238.[7] Poher V, Grossman N, Kennedy G T, et al. Micro-LED arrys:A tool for two-dimentional neuron stimulation [J]. Phys. D:Appl. Phys.,2008, 41:094014(1-9).[8] Naresh C, Monica T L, Kimberley A O, et al. Flip chip bonding of 6868 MWIR LEd arrays [J]. IEEE Trans. Adv. Packaging, 2009, 32(1):9-13.[9] 尹悦,梁静秋,梁中翥,等. 一种LED阵列微显示器件的设计 [J]. 光学精密工程, 2011,19(12):159-164.[10] 尹悦,梁静秋,梁中翥,等.电极结构对AlGaInP-LED阵列电流分布的影响 [J]. 发光学报, 2011,32(10):59-64.[11] 王国宏,马晓宇,王树堂,等.AlGaInP橙色发光二极管的发展 [J]. 半导体技术, 1988,23(4):10-12.[12] 梁静秋,李佳, 王维彪. AlGaInP-LED阵列的设计与制作 [J]. 液晶与显示, 2006,21(6):604-608.[13] Chang S J, Chang C S, Su Y K, et al. Chirped GaAs-AlAs distributed bragg refelectors forhigh brightness yellow-green light-emitting diodes [J]. IEEE Photonics Technology Letters,1997, 9(2):182-184.[14] 林岳明, 张俊兵,曾祥华. AlGaInP LED出光效率的模拟 [J]. 发光学报, 2009,30(2):201-208.[15] 余怀之. 红外光学材料 [M].北京:国防工业出版社,2007:13.[16] 钟迪生. 真空镀膜-光学材料的选择与应用 [M].沈阳:辽宁大学出版社,2001:26.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Improvement of reflectivity of vertical alignment liquid crystal on silicon

Optimized device structure of liquid crystal on silicon

Related Author

Wen-juan LI

Yu-qiang GUO

Hong-mei MA

Yu-bao SUN

Yu-qiang GUO

Hong-mei MA

Wen-juan LI

Yu-qiang GUO

Related Institution

Tianjin Key Laboratory of Electronic Materials and Devices, Hebei University of Technology

School of Instrumentation Science and Opto-electronics Engineering, Beihang University

Department of Applied Physics, Hebei University of Technology

Tianjin Key Laboratory of Electronic Materials and Devices， Hebei University of Technology

School of Instrumentation Science and Opto-electronics Engineering， Beihang University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰