The mechanism of Edge Albino with starting up is investigated by checking of powering on status

and improving methods are demonstrated. The results of analysis show that root cause of Edge Albino comes from interference of electric field which induces LC molecule switch and light leakage. The inter-surface profile of edge area influences on distribution of electric charge and LC molecule alignment

BM resistance impacts spread of induced electric charge. The paper presents relevant experiments for countermeasure. Experimental results show that some methods can solve the problem of edge albino

including decreasing outer gate lines

adding shield layer of induced charge

using high resistance BM material

as well as enlarging distance between gate line and active area. The mechanism of edge albino and countermeasure is investigated in detail.