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Received:09 November 2012,
Revised:30 January 2013,
Published:15 August 2013
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李婧, 张金中, 谢振宇, 阎长江, 陈旭, 闵泰烨. SiN<em><sub>x</sub></em>:H薄膜沉积条件变更对TFT特性的影响[J]. 液晶与显示, 2013,28(4): 547-551
LI Jing, ZHANG Jin-zhong, XIE Zhen-yu, YAN Chang-jiang, CHEN Xu, MIN Tai-ye. Deposition Condition Effects of SiN<em><sub>x</sub></em>:H film on TFT Characteristics of a-Si TFT[J]. , 2013,28(4): 547-551
李婧, 张金中, 谢振宇, 阎长江, 陈旭, 闵泰烨. SiN<em><sub>x</sub></em>:H薄膜沉积条件变更对TFT特性的影响[J]. 液晶与显示, 2013,28(4): 547-551 DOI: 10.3788/YJYXS20132804.0547.
LI Jing, ZHANG Jin-zhong, XIE Zhen-yu, YAN Chang-jiang, CHEN Xu, MIN Tai-ye. Deposition Condition Effects of SiN<em><sub>x</sub></em>:H film on TFT Characteristics of a-Si TFT[J]. , 2013,28(4): 547-551 DOI: 10.3788/YJYXS20132804.0547.
利用等离子化学气相沉积法连续制备SiN
x
:H和a-Si:H薄膜。通过电学、光学、力学测试研究了SiN
x
:H薄膜沉积条件对其界面性能的影响。研究结果表明
过度的富硅化将显著增大体系的界面态
严重影响器件的TFT特性。当SiH
4
和NH
3
气体流量比值为7:15时
开关比(
I
on
/
I
off
)可达3.2410
7
。适当增加功率同样可以提高
I
on
但高于31.5 W/cm
2
后
只会严重地增大薄膜的应力。优化SiN
x
:H的沉积参数
开关比可以提高5.5倍。
SiN
x
:H and a-SiN:H thin films were prepared by plasma enhanced chemical vapor deposition system. This paper investigated the effect of deposition condition of SiN
x
:H film on the interfacial properties of a-SiN:H/SiN
x
:H films
which was characterized by electrical
optical and mechanical measurements. The results showed that excessive silicon could increase interface-state density significantly
which damaged performance of TFT characte-ristics. On/Off current ratio of a-Si TFT was up to 3.2410
7
when the ratio of the SiH
4
and NH
3
gas mass flow rate was 7:15. When the power density was increased above 31.5 W/cm
2
its influence on the electrical property of LCD devices would become weak; meanwhile
the stress was significantly increased. On/Off current ratio was increased by 5.5 times by using optimized parameters of SiN
x
:H thin film.
Indluru A, Alford T L. High-temperature stability and enhanced performance of a-Si:H TFT on flexible substrate due to improved interface quality [J]. IEEE Trans. Electron Devices, 2010, 57(11):3006-3011.[2] Lee S K,Ji J H,Son W H,et al. The effects of phosphorus doping in the a-Si:H and a-SiN:H on the electrical characteristics of a-Si:H TFT [J]. Mol. Cryst. Liq. Cryst., 2012, 563(1):26-35.[3] Kim J W,Kim B J,Sohn Y S,et al.Characterization of a-Si:H TFTs with various phosphorus concentrations in a-SiN:H layer [J]. Mol. Cryst. Liq. Cryst., 2010,532(1):19/[535]-126/[542].[4] Nishizaki S, Ohdaira K,Matsumura H. Study on stability of amorphous silicon thin-film transistors prepared by catalytic chemical vapor deposition [J]. Jpn. J. Appl. Phys., 2008, 47(12):8700-8706.[5] Kuo A,Won T K, Kanicki J. Advanced multilayer amorphous silicon thin-film transistor structure:film thickness effect on its electrical performance and contact resistance [J]. Jpn. J. Appl. Phys., 2008,47(5):3362-3367.[6] Kim J E, Ryu S H, Choi S Y. The effect of a-SiN:H and a-Si:H surface roughness of TFT by PE/RACVD [J]. Int. J. Mod Phys. B, 2010, 24(15):3017-3111.[7] Yoo G, Lee H, Kanicki J. Electrical stability of hexagonal a-Si:H TFTs [J]. IEEE Electron Dev. Lett., 2010, 31(1):53-55.[8] Laades A,Blech M,Bhr M,et al.Comprehensive investigation of silicon surface passivation by a-Si:H and a-SiNx:H films [J].Phys. Status Solidi C, 2011,8(3):763-766.[9] 胡宇飞,孙剑,钟伯强,等.薄膜晶体管a-Si:H/a-SiNx界面研究 [J]. 无机材料学报, 1996, 11(1):183-187.[10] 张化福,袁玉珍,臧永丽,等.P-Si TFT 栅绝缘层用SiNx薄膜界面特性的研究 [J]. 液晶与显示, 2008,23(1):35-38.[11] Huang J J,Liu C J,Lin H C,et al. Influences of low temperature silicon nitride films on the electrical performances of hydrogenated amorphous silicon thin film transistors [J]. J. Phys. D:Appl. Phys., 2008,41(24):1-6.[12] 西安电子科技大学.光折变自适应光外差探测方法:中国,01128777.2[P/OL].2002-03-06[2002-05-28].http://211.152.9.47/sipoasp/zljs/hyjs-yx-new.asp?recid=01128777.2&leixin=0.[13] PACS-L: the public-access computer systems forum.Houston,Tex: University of Houston Libraries, 1989. http://info. lib.edu/pacsl.html.[14] Online Computer Library Center,Inc.History of OCLC.. http://www.oclc.org/about/history/default.htm.
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