Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

KWOK Hoi-Sing; ZHOU Wei; CHEN Rong-sheng; ZHAO Shu-yun; ZHANG Meng; WONG Man; CHEN Shu-min

doi:10.3788/YJYXS20132804.0471

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Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

Invited Paper | 更新时间：2020-08-12

- Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 28, Issue 4, Pages: 471-478(2013)
- 作者机构：
  
  1. 香港科技大学显示技术研究中心,香港
  2. 广东中显科技有限公司,广东佛山,528225
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20132804.0471
  CLC： TN321+.5
- Received：15 April 2013，
  
  Revised：12 May 2013，
  
  Published：15 August 2013
- 稿件说明：
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郭海成, 周玮, 陈荣盛, 赵淑云, 张猛, 王文, 陈树明, 周南云. 搭桥晶粒多晶硅薄膜晶体管[J]. 液晶与显示, 2013,28(4): 471-478

KWOK Hoi-Sing, ZHOU Wei, CHEN Rong-sheng, ZHAO Shu-yun, ZHANG Meng, WONG Man, CHEN Shu-ming, CHOW Thomas. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors[J]. , 2013,28(4): 471-478
郭海成, 周玮, 陈荣盛, 赵淑云, 张猛, 王文, 陈树明, 周南云. 搭桥晶粒多晶硅薄膜晶体管[J]. 液晶与显示, 2013,28(4): 471-478 DOI： 10.3788/YJYXS20132804.0471.

KWOK Hoi-Sing, ZHOU Wei, CHEN Rong-sheng, ZHAO Shu-yun, ZHANG Meng, WONG Man, CHEN Shu-ming, CHOW Thomas. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors[J]. , 2013,28(4): 471-478 DOI： 10.3788/YJYXS20132804.0471.

摘要

提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟

验证了此种器件结构的物理机制。通过应用这种新结构

薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善

并且器件的热载流子和自加热可靠性也得到了极大的改善。

Abstract

A new structure for thin-film transistors is proposed and demonstrated

exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage

pseudo subthreshold slope

on-off current ratio and field-effect mobility are improved. Furthermore

device hot carrier and self-heating reliability are also improved by this new structure.

关键词

Keywords

references

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Related Author

Zhi-he XIA

Wei ZHOU

Rong-sheng CHEN

Man WONG

Hoi-Sing KWOK

Meng ZHANG

KWOK Hoi-sing

WONG Man

Related Institution

State Key Laboratory on Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology

State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology

North LC Engineering Research and Development Center, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130031, China, E-mail: wangzj

Graduate School of Chinese Academy of Sciences

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