Contact Resistance of Electrodes in Tips-Pentacene OTFTs

LIU Huan; YU Tun; QIU Yu; ZHONG Chuan-jie

doi:10.3788/YJYXS20132802.0210

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Contact Resistance of Electrodes in Tips-Pentacene OTFTs

Device Physics & Device Technology | 更新时间：2020-08-12

- Contact Resistance of Electrodes in Tips-Pentacene OTFTs
- Chinese Journal of Liquid Crystals and Displays Vol. 28, Issue 2, Pages: 210-214(2013)
- 作者机构：
  
  江南大学电子工程系轻工过程先进控制教育部重点实验室,江苏无锡,214122
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20132802.0210
  CLC： TN321+.5
- Received：28 October 2012，
  
  Revised：25 December 2012，
  
  Published：15 April 2013
- 稿件说明：
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刘欢, 余屯, 邱禹, 钟传杰. Tips-Pentacene OTFT电极接触电阻的研究[J]. 液晶与显示, 2013,28(2): 210-214

LIU Huan, YU Tun, QIU Yu, ZHONG Chuan-jie. Contact Resistance of Electrodes in Tips-Pentacene OTFTs[J]. , 2013,28(2): 210-214
刘欢, 余屯, 邱禹, 钟传杰. Tips-Pentacene OTFT电极接触电阻的研究[J]. 液晶与显示, 2013,28(2): 210-214 DOI： 10.3788/YJYXS20132802.0210.

LIU Huan, YU Tun, QIU Yu, ZHONG Chuan-jie. Contact Resistance of Electrodes in Tips-Pentacene OTFTs[J]. , 2013,28(2): 210-214 DOI： 10.3788/YJYXS20132802.0210.

摘要

采用转移线性法分析了以PVP为栅绝缘层、以Tips-pentacene为有源层的有机薄膜晶体管(OTFT)电极与有源层间的接触电阻

其中介电层和有源层均采用旋涂法制备

银电极采用喷墨印刷法制备。沟道长度分别取200

250

300 m和400 m

有源层退火时间分别为2 h

6 h和10 h

提取到的3种不同退火时间的OTFT的接触电阻分别为8 M

4.5 M和3 M

退火10 h的OTFT的接触电阻较小主要是因为较长时间的退火使得Tips-pentacene有源层中的杂质较少

电极和有源层之间的接触势垒较小。

Abstract

This paper analyzed the contact resistance between inkjet-printed silver source/drain (S/D) electrodes and organic semiconductor layer of Organic Thin-film Transistors(OTFTs) using transmission line method(TLM). Spin-coated PVP thin-film and Tips-pentacene thin-film were used as gate dielectric layer and semiconductor layer

respectively. S/D electrodes with four different channel lengths of 200

250

300 m and 400 m were inkjet-printed

and the annealed time of different semiconductor layers was 2 h

6 h and 10 h

respectively. The extracted contact resistances were 8 M

4.5 M and 3 M for OTFTs with three different kinds of annealed time

respectively. Lower contact resistance for OTFTs with annealed time of 10 h can be explained by the fact that longtime annealing can reduce the impurity in the semiconductor layer and lower the contact barrier between electrodes and semiconductor layer.

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Keywords

references

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