Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

ZHAN Run-ze; SHIEH Han-ping; DONG Cheng-yuan

doi:10.3788/YJYXS20132801.0055

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Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

更新时间：2020-08-12

- Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes
- Chinese Journal of Liquid Crystals and Displays Vol. 28, Issue 1, Pages: 55-58(2013)
- 作者机构：
  
  上海交通大学电子工程系 TFT-LCD关键材料与技术国家重点工程实验室上海,200240
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20132801.0055
  CLC： TN321＋.5
- Received：30 October 2012，
  
  Revised：14 November 2012，
  
  Published：15 February 2013
- 稿件说明：
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詹润泽, 谢汉萍, 董承远. 采用不同透明电极的非晶铟镓锌氧化物薄膜晶体管[J]. 液晶与显示, 2013,(1): 55-58

ZHAN Run-ze, SHIEH Han-ping, DONG Cheng-yuan. Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes[J]. , 2013,(1): 55-58
詹润泽, 谢汉萍, 董承远. 采用不同透明电极的非晶铟镓锌氧化物薄膜晶体管[J]. 液晶与显示, 2013,(1): 55-58 DOI： 10.3788/YJYXS20132801.0055.

ZHAN Run-ze, SHIEH Han-ping, DONG Cheng-yuan. Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes[J]. , 2013,(1): 55-58 DOI： 10.3788/YJYXS20132801.0055.

摘要

采用透明材料ITO和AZO为源漏电极

在室温下利用射频磁控溅射方法制作了底栅结构的非晶铟镓锌氧化物薄膜晶体管。实验发现

制备的薄膜晶体管均表现出了良好的开关特性。其中采用AZO为电极的薄膜晶体管的场效应迁移率为1.95 cm

/V·s

开关比为4.53×10

在正向偏压应力测试下

阈值电压的漂移量为4.49 V。

Abstract

Amorphous InGaZnO thin film transistors with bottom gate structure using transparent materials ITO and AZO as drain/source electrodes were fabricated by RF sputtering at room temperature. It was found that the fabricated TFTs exhibited good performance. For TFTs with AZO as electrodes

field effect mobility of 1.95 cm

/V穝

and on-off ratio of 4.53?10

as well as a threshold voltage shift of 4.49 V under positive bias stressing were achieved.

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Keywords

references

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Kamiya T, Nomura K, Hosono H. Present status of amorphous In-Ga-Zn-O thin-film transistors [J].Sci. Technol. Adv. Mater., 2010, 11(4):044305.

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Related Institution

Department of Electronic Engineering, Shanghai Jiao Tong University

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State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Hong Kong University of Science and Technology

Department of Electronic Engineering， Shanghai Jiao Tong University

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