Efficiency Characteristic Analysis and Driving Scheme Design of Power LEDs

QIN Xue-ling; HE Zhi-yi; HE Ning

doi:10.3788/YJYXS20122703.0371

您当前的位置：

首页 >

文章列表页 >

Efficiency Characteristic Analysis and Driving Scheme Design of Power LEDs

Driving & Controlling | 更新时间：2020-08-12

- Efficiency Characteristic Analysis and Driving Scheme Design of Power LEDs
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 3, Pages: 371-377(2012)
- 作者机构：
  
  桂林电子科技大学信息与通信学院,广西桂林,541004
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20122703.0371
  CLC： TN312.8
- Received：01 November 2011，
  
  Revised：14 January 2012，
  
  Published Online：15 June 2012，
  
  Published：15 June 2012
- 稿件说明：
移动端阅览
覃雪玲, 何志毅, 何宁. 大功率LED效率特性分析与驱动方案设计[J]. 液晶与显示, 2012,(3): 371-377

QIN Xue-ling, HE Zhi-yi, HE Ning. Efficiency Characteristic Analysis and Driving Scheme Design of Power LEDs[J]. , 2012,(3): 371-377
覃雪玲, 何志毅, 何宁. 大功率LED效率特性分析与驱动方案设计[J]. 液晶与显示, 2012,(3): 371-377 DOI： 10.3788/YJYXS20122703.0371.

QIN Xue-ling, HE Zhi-yi, HE Ning. Efficiency Characteristic Analysis and Driving Scheme Design of Power LEDs[J]. , 2012,(3): 371-377 DOI： 10.3788/YJYXS20122703.0371.

摘要

考察了大功率LED量子效率衰落问题的研究进展并检测和比较了当前市场不同产品的大功率LED性能

随着LED效率-电流特性的逐渐改善

其最高效率所对应驱动电流开始超过额定电流。由此提出LED的矩形波脉冲驱动策略

驱动电路中MOS晶体管栅极由低频 (200~800 Hz)矩形脉冲调制高频 (~40 kHz)脉冲产生的间歇式PWM脉冲串来控制

在输出端滤除高频成分后得到接近于矩形波的低频脉冲电流输出。在调节驱动电路的电流工作点以达到负载LED最高发光效率工作点同时

约束输出脉冲峰值电流与占空比以保证LED驱动电流的平均值恒定。

Abstract

Development of the research on power LEDs’ quantum efficiency droop was investigated. Several LED products with different performance of high power operation were compared. Due to the improvement of the LEDs’ efficiency dependence on the driving current

their operating current corresponding to the maximum efficiency are exceeding their rating values. Under this circumstance

a driving strategy by rectangular pulse is proposed. In the driving circuit

the MOSFET’s gate was controlled by an intermittent waveform of PWM pulse series which is generated by modulating the rectangular pulses at lower frequency (200~800 Hz) on those at higher frequency (~40 kHz)

whereby an approximately rectangular waveform at the lower frequency of the current pulses can be obtained by filtering the high frequency components. The peak current and duty ratio of the output drive to the loaded LED were correlated to maintain the constant drive current in average while the operating current was regulated to reach the maximum efficiency of the loaded LED.

关键词

Keywords

references

张福林,林旭,廖欣,等.InGaN蓝光LED量子效率与注入电流的关系研究 [J]. 光电子·激光,2009,20(11):1442-1445.

Reed M L, Readinger E D, Shen H, et al. n-InGaN/p-GaN single heterostructure light emitting diode with p-side down [J]. Appl. Phys. Lett., 2008, 93(13):133505 (1-3).

Maier M, Passow T, Kunzer M, et al. Efficiency and non-thermal roll-over of violet emitting GaInN light-emitting diodes grown on substrates with different dislocation densities [J]. Physica Status Solidi C, 2009, 6 (6): 1412-1415.

Lin R M, Lai M J, Chang L B, et al. Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes [J]. Appl. Phys. Lett., 2010, 97(18):181108 (1-3).

Ling S C, Lu T C, Chang S P, et al. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes [J]. Appl. Phys. Lett., 2010, 96(23):231101 (1-3).

李炳乾.1 W级大功率白光LED发光效率研究 [J]. 半导体光电, 2005,26(4):314-318.

Lee J, Li X, Ni X, et al. On carrier spillover in c- and m-plane InGaN light emitting diodes [J]. Appl. Phys. Lett., 2009, 95(20):201113 (1-3).

Lee Y J, Chen C H, Lee C J. Reduction in the efficiency-droop effect of InGaN green light-emitting diodes using gradual quantum wells [J]. IEEE Photonics Technology Letters, 2010, 22 (20): 1506-1508.

康香宁,包魁.垂直电极结构GaN基发光二极管的研制 [J]. 半导体学报, 2007,28(13):483-485.

王婷,崔占忠,徐立新.激光剥离技术实现垂直结构GaN基LED [J]. 光学技术, 2009,35(2):172-174.

黄亚军,王良臣,刘志强,等.垂直结构GaN基LEDs电流分布计算分析 [J]. 半导体技术, 2009,34(9):861-864.

Kim Hyunsoo, Kim Kyoung-Kook, Choi Kwang-Ki, et al. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry [J]. Appl. Phys. Lett., 2007,91(2): 023510 (1-3).

白林,梁宏宝.大功率白光LED路灯发光板设计与驱动技术 [J]. 发光学报, 2009,30(4):487-485.

Wang S J, Chen S L, Uang K M, et al. The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes [J]. IEEE Photonics Technology Letters, 2007, 18(10):1146-1148.

Seo Tae Hoon, Lee Kang Jea, Oh Tae Su, et al. Graphene Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode [J]. Appl. Phys. Lett., 2011,98(25):251114 (1-3).

Shao X J, Lu H, Chen D J, et al. Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes [J]. Appl. Phys. Lett., 2009, 95(16): 163504 (1-3).

张普雷,史永胜,史耀华,等.大功率背光源用LED驱动电路的研究现状与进展 [J]. 液晶与显示, 2010,25(1):68-74.

Buso S, Spiazzi G, Meneghini M, et al. Performance degradation of high-brightness light emitting diodes under DC and pulsed bias [J]. IEEE Transaction on Device and Maters Reliability, 2008, 8(2):312-322.

Yanagisawa T, Kojima T. Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations [J]. Microelectronics Reliability, 2003, 43 (6):997-980.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Study and Analysis of Test System for Thermal Characteristic of High Power LED

Related Author

WANG Wei

WANG Wan-liang

PAN Jian-gen

LI qian

Related Institution

Automatic Research Institute, College of Information Engineering, Zhejiang University of Technology, Hangzhou 310014,China,E-mail:wangwei211x@163.

Everfine Photo-E-Info Co., Ltd.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰