High Performance Organic Thin Film Transistor Based on Top-Gate Configuration

HONG Fei; TIAN Li; ZHU Qi-feng; XIANG Chang-jiang; HAN Xue-bin; ZHANG Qi-guo; GUO Xiao-don

doi:10.3788/YJYXS20122703.0313

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High Performance Organic Thin Film Transistor Based on Top-Gate Configuration

Device Physiscs & Device Technology | 更新时间：2020-08-12

- High Performance Organic Thin Film Transistor Based on Top-Gate Configuration
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 3, Pages: 313-317(2012)
- 作者机构：
  
  中国科学院上海高等研究院新型显示技术研究中心, 上海 201210
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20122703.0313
  CLC： TN321.5
- Received：27 December 2011，
  
  Revised：16 January 2012，
  
  Published Online：15 June 2012，
  
  Published：15 June 2012
- 稿件说明：
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洪飞, 谭莉, 朱棋锋, 向长江, 韩学斌, 张其国, 郭晓东, 申剑锋. 高性能顶栅结构有机薄膜晶体管[J]. 液晶与显示, 2012,(3): 313-317

HONG Fei, TIAN Li, ZHU Qi-feng, XIANG Chang-jiang, HAN Xue-bin, ZHANG Qi-guo, GUO Xiao-dong, SHEN Jian-feng. High Performance Organic Thin Film Transistor Based on Top-Gate Configuration[J]. , 2012,(3): 313-317
洪飞, 谭莉, 朱棋锋, 向长江, 韩学斌, 张其国, 郭晓东, 申剑锋. 高性能顶栅结构有机薄膜晶体管[J]. 液晶与显示, 2012,(3): 313-317 DOI： 10.3788/YJYXS20122703.0313.

HONG Fei, TIAN Li, ZHU Qi-feng, XIANG Chang-jiang, HAN Xue-bin, ZHANG Qi-guo, GUO Xiao-dong, SHEN Jian-feng. High Performance Organic Thin Film Transistor Based on Top-Gate Configuration[J]. , 2012,(3): 313-317 DOI： 10.3788/YJYXS20122703.0313.

摘要

采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料

利用弱外延生长技术制备有机薄膜晶体管(OTFT)。在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型

发现两种不同结构的OTFT器件特性存在较大的差异

top-gate OTFT的迁移率比bottom-gate OTFT 高很多。在顶栅结构的器件构型中获得了较高的器件特性参数

迁移率达到1.6 cm

/V·s。研究了弱外延生长技术应用在两种不同器件构型中的差异

并解释了顶栅结构OTFT迁移率较高的原因。

Abstract

Organic thin film transistors based on Weak Epitaxy Growth (WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations. The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine (VOPc). The two structural OTFTs are prepared under the same process conditions

and it is found that the device performance is different. The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT. A high mobility of 1.6 cm

/V穝 is obtained in the top-gate structure. The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth (WEG) technology

and the reasons of higher mobility OTFT based on the top-gate configuration is explained.

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references

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