Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization

PENG Shang-long; HU Duo-kai; HE De-yan

doi:10.3788/YJYXS20122703.0303

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Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization

Material Physics & Chemistry | 更新时间：2020-08-12

- Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 3, Pages: 303-307(2012)
- 作者机构：
  
  兰州大学物理科学与技术学院, 甘肃兰州 730000
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20122703.0303
  CLC： TN304.8;TN321+.5;TN304.055
- Received：22 November 2011，
  
  Revised：24 February 2012，
  
  Published Online：15 June 2012，
  
  Published：15 June 2012
- 稿件说明：
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彭尚龙, 胡多凯, 贺德衍. 镍硅化物诱导横向晶化制备高性能多晶硅薄膜晶体管[J]. 液晶与显示, 2012,(3): 303-307

PENG Shang-long, HU Duo-kai, HE De-yan. Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization[J]. , 2012,(3): 303-307
彭尚龙, 胡多凯, 贺德衍. 镍硅化物诱导横向晶化制备高性能多晶硅薄膜晶体管[J]. 液晶与显示, 2012,(3): 303-307 DOI： 10.3788/YJYXS20122703.0303.

PENG Shang-long, HU Duo-kai, HE De-yan. Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization[J]. , 2012,(3): 303-307 DOI： 10.3788/YJYXS20122703.0303.

摘要

提出一种新的采用镍硅化物作为种子诱导横向晶化制备低温多晶硅薄膜晶体管的方法。分别采用微区Raman、原子力显微镜和俄歇电子能谱对制备的多晶硅薄膜进行结构和性能表征

并以此多晶硅薄膜为有源层制备了薄膜晶体管

测试其

I-V

转移特性。测试结果显示

制备的多晶硅薄膜具有较低的金属污染和较大的晶粒尺寸

且制备的多晶硅薄膜晶体管具有良好的电学特性

可以有效地减小漏电流

同时可提高场效应载流子迁移率。这主要是由于多晶硅沟道区中镍含量的有效降低使得俘获态密度减少。

Abstract

A new crystallization method is proposed for poly-Si thin film transistors by Ni silicide induced lateral crystallization. The poly-Si thin films were characterized by micro-Raman spectroscopy

auger electronic spectroscopy and atomic force microscopy. The poly-Si thin film transistor is also fabricated using this poly-Si as active layer. And the electrical properties are obtained from

transfer curve measurements. Compared with the thin film transistor prepared using conventional Ni induced lateral crystallization method

the fabricated poly-Si thin film transistor showed lower leakage current and higher field-effect mobility. It was attributed to the reduction of Ni concentration in the poly-Si channel. Also

the trap states in grain boundaries were decreased.

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references

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