Effects of Rapid Thermal Annealing on I-V-T Properties of Schottky Junction Co/n-poly-SiGe

WANG Guang-wei; YAO Su-ying; XU Wen-hui; WANG Ya-xin

doi:10.3788/YJYXS20112605.0582

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Effects of Rapid Thermal Annealing on I-V-T Properties of Schottky Junction Co/n-poly-SiGe

Material Physics & Chemistry | 更新时间：2020-08-12

- Effects of Rapid Thermal Annealing on I-V-T Properties of Schottky Junction Co/n-poly-SiGe
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 5, Pages: 582-586(2011)
- 作者机构：
  
  1. 天津大学电信学院天津,300072
  2. 天津职业技术师范大学电子学院天津,300222
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20112605.0582
  CLC： TN311+.8
- Received：23 January 2011，
  
  Revised：16 March 2011，
  
  Published Online：20 October 2011，
  
  Published：20 October 2011
- 稿件说明：
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王光伟, 姚素英, 徐文慧, 王雅欣. 快热退火对Co/n-Poly-SiGe肖特基结I-V-T特性的影响[J]. 液晶与显示, 2011,26(5): 582-586

WANG Guang-wei, YAO Su-ying, XU Wen-hui, WANG Ya-xin. Effects of Rapid Thermal Annealing on I-V-T Properties of Schottky Junction Co/n-poly-SiGe[J]. , 2011,26(5): 582-586
王光伟, 姚素英, 徐文慧, 王雅欣. 快热退火对Co/n-Poly-SiGe肖特基结I-V-T特性的影响[J]. 液晶与显示, 2011,26(5): 582-586 DOI： 10.3788/YJYXS20112605.0582.

WANG Guang-wei, YAO Su-ying, XU Wen-hui, WANG Ya-xin. Effects of Rapid Thermal Annealing on I-V-T Properties of Schottky Junction Co/n-poly-SiGe[J]. , 2011,26(5): 582-586 DOI： 10.3788/YJYXS20112605.0582.

摘要

采用射频磁控溅射法在n-Si(100)衬底上沉积Si

薄膜

俄歇电子谱(AES)测定Si

薄膜的Ge含量约为17%。对薄膜进行高温磷扩散掺杂

制得n-poly-Si

0.83

0.17

。在n-poly-Si

0.83

0.17

薄膜上溅射一层Co膜

制成Co/n-poly-Si

0.83

0.17

/n-Si肖特基结样品。在300~600 ℃范围内

对样品做快热退火。对不同退火温度下的样品做

I-V-T

测试。研究发现

测试温度升高

不同退火温度样品的肖特基势垒高度(SBH)的差别变小

500 ℃退火的样品

表观SBH最小。总体上

SBH随测试温度的升高而变大

理想因子的变化趋势则与之相反。基于SBH的不均匀分布建模

对实验结果给出了较为合理的解释。

Abstract

On n-Si(100) substrates

the Si

films were deposited by RF magnetron sputtering technique. AES spectra determine that Ge content in the Si

film is 17% approxi-mately. The Si

0.83

0.17

films were doped with phosphorus at high temperature through thermal diffusion to fabricate n-type polycrystalline films

that is

the n-poly-Si

0.83

0.17

. And a Co film was sputtered on it. Thus

the Co/n-poly-Si

0.83

0.17

/n-Si Schottky junctions were made. Rapid thermal annealing (RTA) was conducted on these junctions from 300 ℃ to 600 ℃. The variable temperature

I-V

testing has been performed on the annealed Co/n-poly-Si

0.83

0.17

Schottky junctions. It is found that

with the test temperature increase

the Schottky barrier height (SBH) difference of samples annealed at different RTA temperatures becomes less. And the sample annealed at 500 ℃ has the least apparent SBH. As a whole

the SBHs increase and the apparent ideality factors decrease with the test temperature increasing. Based on the model of inhomogeneous distribution of SBH

a reasonable explanation has been fulfilled on the experimental data.

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Keywords

references

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