Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode

LV Wen-hui; ZHANG Shuai

doi:10.3788/YJYXS20112604.0486

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Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode

Device Technology & Physics | 更新时间：2020-08-12

- Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 4, Pages: 486-489(2011)
- 作者机构：
  
  1. 湛江师范学院物理系,广东湛江, 524048
  2. 湛江师范学院科技处,广东湛江,524048
  3. 浙江大学硅材料国家重点实验室,浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20112604.0486
  CLC： O462.4
- Received：26 January 2011，
  
  Revised：01 April 2011，
  
  Published Online：20 August 2011，
  
  Published：20 August 2011
- 稿件说明：
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吕文辉, 张帅. 图形化硅纳米线阵列场发射阴极的制备及其场发射性能[J]. 液晶与显示, 2011,26(4): 486-489

LV Wen-hui, ZHANG Shuai. Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode[J]. , 2011,26(4): 486-489
吕文辉, 张帅. 图形化硅纳米线阵列场发射阴极的制备及其场发射性能[J]. 液晶与显示, 2011,26(4): 486-489 DOI： 10.3788/YJYXS20112604.0486.

LV Wen-hui, ZHANG Shuai. Fabrication and Properties of Patterned Si Nanowire Arrays FED Cathode[J]. , 2011,26(4): 486-489 DOI： 10.3788/YJYXS20112604.0486.

摘要

结合光刻工艺和金属援助硅化学刻蚀法成功地制备了图形化的硅纳米线阵列场发射阴极

研究了其场发射性能。扫描电子显微镜照片显示

嵌入在硅衬底的硅纳米线阵列为垂直取向

形成图形化。场发射测试与分析表明

该阴极能够有效实现场电子发射

并且有利于获得图形化、低发散角的电子束。本研究提供了一种在硅基底上简单、有效地选域制备图形化硅纳米线阵列场发射阴极的途径

可潜在用于构筑各种真空微电子器件。

Abstract

The patterned Si nanowire arrays have been successfully fabricated by combining photolithography and metal-assisted Si chemical etching.The morphologies of the arrays are characterized by scanning electron microscopy (SEM). The experimental results reveal that field electron emission from the arrays can be obtained. The patterned Si nanowire arrays is beneficial to patterned electron beams with a low divergence angle. The investigation results provided an efficient way to fabricate the patterned Si nanowire arrays electron sources for various vacuum microelectron devices with some advantages such as

simple process and suitable for IC technology.

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references

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