Solution for Metal Remain in TFT-LCD Manufacturing Process

JIANG Dong-hua; LEE Soon-dong; LEE Byung-chun

doi:10.3788/YJYXS20112602.0170

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Solution for Metal Remain in TFT-LCD Manufacturing Process

Table of contents | 更新时间：2020-08-12

- Solution for Metal Remain in TFT-LCD Manufacturing Process
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 2, Pages: 170-173(2011)
- 作者机构：
  
  成都京东方光电科技有限公司,四川成都,611731
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20112602.0170
  CLC： TN141.9
- Received：30 August 2010，
  
  Revised：08 October 2010，
  
  Published Online：06 April 2011，
  
  Published：06 April 2011
- 稿件说明：
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蒋冬华, 李淳东, 李炳天. TFT-LCD制造工艺中金属残留的解决方案[J]. 液晶与显示, 2011,26(2): 170-173

JIANG Dong-hua, LEE Soon-dong, LEE Byung-chun. Solution for Metal Remain in TFT-LCD Manufacturing Process[J]. , 2011,26(2): 170-173
蒋冬华, 李淳东, 李炳天. TFT-LCD制造工艺中金属残留的解决方案[J]. 液晶与显示, 2011,26(2): 170-173 DOI： 10.3788/YJYXS20112602.0170.

JIANG Dong-hua, LEE Soon-dong, LEE Byung-chun. Solution for Metal Remain in TFT-LCD Manufacturing Process[J]. , 2011,26(2): 170-173 DOI： 10.3788/YJYXS20112602.0170.

摘要

在TFT-LCD阵列的四次掩模技术中

复合层刻蚀是非常难控制的一道工序

最突出的问题是在复合层刻蚀后信号线的两边有金属残留

金属残留会对之后的绝缘层产生影响

导致断层等不良。调整复合层刻蚀工艺是目前解决金属残留问题的通用方法

但是都没有根本地解决这个问题。文章通过研究信号线刻蚀时间对复合层刻蚀后金属残留的影响

认为通过调整信号线的刻蚀时间能够根本解决复合层刻蚀后金属残留的问题

并且不会使金属线线宽超出控制范围。

Abstract

In 4-mask manufacturing process of the thin film transistor (TFT) liquid crystal display (LCD)

multi-layer etch is a very critical process

because metal remain defect would happen after multi-layer etch

which will influence on the next insulator layer deposition

and induce layer broken. Conventional method for eliminating metal remain is to adjust multi-layer etch process

but there is no fundamental improvement. In this paper

the influence of data line etch time on metal remain after multi-layer etch has been researched

and it is found that metal remain could be fundamentally eliminated by adjusting data line etch time

and also could keep data line width in control.

关键词

Keywords

references

邓朝勇,林承武. 一种TFT LCD阵列基板结构及其制造方法:中国专利,ZL200610080640 . 1997-08-09.[2] 刘翔,王章涛,崔祥彦,等. 薄膜晶体管阵列四次光刻工艺中光刻胶灰化工艺的研究 [J]. 液晶与显示, 2008, 23 (2):183-187.[3] 董杰,金相起,朴范求,等. a-Si TFT LCD过孔尺寸的缩减 [J]. 液晶与显示, 2008, 23(6):688-691.[4] 刘翔,陈旭,谢振宇,等. 使用低电阻金属铝制造薄膜晶体管阵列信号电极 [J]. 液晶与显示, 2009, 24(4):533-536 . (上接P153)例:[12] 西安电子科技大学.光折变自适应光外差探测方法:中国,01128777.2 .2002-03-06 .http://211.152.9.47/sipoasp/zljs/hyjs-yx-new.asp?recid=01128777.2&leixin=0. 电子文献: 主要责任者.题名:其他题名信息 .出版地:出版者,出版年(更新或修改日期) .获取和访问路径.例:[13] PACS-L: the public-access computer systems forum .Houston,Tex: University of Houston Libraries, 1989 . http: // info. lib.edu/pacsl.html. 例:[14] Online Computer Library Center,Inc.History of OCLC . . http:// www.oclc.org/about/history/default.htm. 2.文后参考文献应在正文中引用该文献处进行标注。3.关于作者姓名,姓在前,名在后(拉丁文只用缩写);作者3人以下应全部列出,4人以上仅列出前3人,其后加"等"(外文加"et al")。4.注意参考文献标注的标点符号、次序,并不得缺项。5.参考文献著录不规范的有可能影响文章的录用。注:文献类型和电子文献载体标志代码:

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