Transparent conducting Al-Ti co-doped zinc oxide films have been successfully prepared by DC magnetron sputtering. Microstructural
optical and electrical properties of TAZO films are investigated. The experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the
c
-axis. When the sputtering pressures is 7.5 Pa
the lowest resistivity is 3.3410
-4
cm. All the films present a high transmittance of above 89% in the visible range. The sputtering pressures plays an important role on the microstructure and electrical resistivity of TAZO films.
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郝晓涛,马瑾,马洪磊,等.薄膜厚度对ZnO∶Al透明导电膜性能的影响 [J]. 液晶与显示, 2002,17(3):169-174.[2] 任明放,王华,许积文,等.掺杂及工艺条件对室温制备ZnO ∶ Al性能的影响 [J]. 液晶与显示, 2009,24(1):52-56.[3] 徐艺滨,杜国同,刘维峰,等.ZnO-Al透明导电薄膜的制备及其特性分析 [J]. 人工晶体学报, 2006,35(3):569-572.[4] 刘汉法,张化福,袁玉珍,等.掺钛氧化锌透明导电薄膜的制备及特性研究 [J]. 半导体技术, 2009,34(11):1092-1095.[5] 余旭浒,马瑾,计峰,等.薄膜厚度对ZnO ∶ Ga透明导电膜性能的影响 [J]. 功能材料, 2005, 36(2):241-243.[6] Liu H F, Zhang H F, Lei C X, et al. Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering [J]. J. Semiconductors, 2009, 30(2):02300(1-4).[7] Zhang H F, Lei C X, Liu H F, et al. Low-temperature deposition of transparent conducting ZnO ∶ Zr films on PET substrates by DC magnetron sputtering [J]. Appl. Surface Science, 2009, 255(11):6054-3056.[8] 刘汉法,张化福,类成新,等. 薄膜厚度对ZnO ∶ Zr透明导电薄膜光电性能的影响 [J]. 液晶与显示, 2008,23(6):707-710.[9] 郭金玲,沈岳年.用Scherrer公式计算晶粒度应注意的几个问题 [J]. 内蒙古师范大学学报(自然科学汉文版), 2009,38(3):357-358.[10] 周继承,李莉.溅射气压对 ZnO 透明导电薄膜光电性能的影响 [J]. 中国有色金属学报, 2009,19(7):1278-1283.