Kelly P J, Zhou Y, Postill A. A novel technique for the deposition of aluminium-doped zinc oxide films [J].Thin Solid Films, 2003, 426(1):111-116.[2] 叶志镇,吕建国,张银珠,等. 氧化锌半导体材料掺杂技术与应用 [M]. 杭州:浙江大学出版社,2009.[3] Chen G Y, Zheng K B, Mo X L, et al. Metal-free indoline dye sensitized zinc oxide nanowires solar cell [J].Materials Letters, 2010, 64(12):1336-1339.[4] Polyakov A Y, Smirnov N B, Govorkov A V, et al. Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO [J].J. Appl. Phys., 2003, 94(1):400-406.[5] Kim S, Song I, Park Y, et al. Channel layer used for manufacturing thin film transistor used as switching device or driving device for flat panel display device such as liquid crystal display apparatus, comprises indium zinc oxide doped with transition metal,USA:US2009001432-A1 . 2009-01-01.[6] 刘延辉, 曾大文, 王辉虎, 等. 热氧化纳米Zn制备ZnO厚膜及其气敏特性的研究 [J]. 传感技术学报, 2005, 18(3):43-46.[7] 赵鸣, 王卫民, 张昌松,等. ZnO低压压敏电阻陶瓷材料研究进展 [J]. 材料科学与工程学报, 2005, 23(6):915-918.[8] Ohta H, Kawamura K I,Orita M, et al. Current injection emission fom a transparent p-n junction composed of p-SrCu2O2/n-ZnO [J]. Appl. Phys. Lett., 2000, 77(4):475-477.[9] Natsume Y, Sakata H. Electrical and optical properties of zinc oxide films post-annealed in H2 after fabrication by sol-gel process [J].Materials Chem. and Phys., 2003, 78(1):170-176.[10] Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors [J].Appl. Phys. Lett., 2003, 82(5):733-735.[11] Carcia P F, McLean R S, Reilly M H, et al. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].Appl. Phys. Lett., 2003, 82 (7):1117-1119.[12] Hossain F M, Nishii J, Takagi S, et al. Modeling and simulation of polycrystalline ZnO thin-film transistors [J].J. Appl. Phys., 2003, 94(12):7768-7777.[13] Wu I W. Outlook of low temperature poly silicon (LTPS) technology for information display and beyond //The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Tucson,USA: IEEE,2003:882-883.[14] Liu D N, Yeh Yung-Hui, Chiou Hwa-Liang. Development of low temperature p-Si TFT-LCD //The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Rio Grande, Puerto Rico: IEEE,2004:182-183.[15] Nichols J A, Jackson T N, Lu M H, et al. a-Si ∶ H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates //The 62nd DRC: Device Research Conference, Notre Dame,USA: IEEE, 2004:59-60.[16] Sambandan S, Striakhilev D, Nathan A. Device and circuit level optimization for high performance a-Si ∶ H TFT-based AMOLED displays [J].J. Display Technology, 2006, 2(1):52-59.[17] 程松华,曾祥斌. ZnO基薄膜晶体管的研究 [J]. 液晶与显示, 2006, 21(5):515-520.[18] Carcia P F, McLean R S, Reilly M H,et al. ZnO thin film transistors for flexible electronics [J]. Mat. Res. Soc. Symp. Proc., 2003, 769(H7.2):1-6.[19] Fortunato E, Barquinha P, Pimentel A, et al. Recent advances in ZnO transparent thin film transistors [J].Thin Solid Films, 2005, 487(1-2):205-211.[20] Park S H K, Hwang C S. Transparent ZnO thin film transistor array for the application of transparent AM-OLED display //SID 06 Digest, San Francisco, USA: SID, 2006:25-28.[21] 王中健,王龙彦,马仙梅,等. 透明非晶态氧化物半导体薄膜晶体管的研究进展 [J]. 液晶与显示, 2009, 24(2):210-216.[22] Han D D, Wang Y, Zhang S D, et al. Fabrication and characteristics of ZnO-based thin film transistors //The 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing,China:IEEE,2008:982-984.[23] Wang Y, Liu SW, Sun XW, et al. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors [J].J. Sol-Gel Sci. Technol., 2010, 55:322-327.[24] Yang Y H,Yang S S,Chou K S.Characteristic enhancement of solution-processed In-Ga-Zn oxide thin-film transistors by laser annealing [J].IEEE Electron Device Lett., 2010, 31(9):969-971.[25] Lee J S, Chang S, Koo S M, et al. High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature [J].IEEE Electron Device Letters, 2010, 31(3):225-227.[26] Lee H N, Kyung J W, Kang S K, et al. Current status of, challenges to, and perspective view of AM-OLED //IDW06: Proceedings of The 13th International Display Workshops, Shiga, Japan:IDW, 2006, 1-3:663-666.[27] Martins R, Barquinha P, Pimentel A, et al. Transport in high mobility amorphous wide band gap indium zinc oxide films [J].Physica Status Solidi (A) - Applications and Materials Science, 2005, 202(9):R95-R97.[28] Wu W J, Yao R H, Li S H, et al. A Compact model for polysilicon TFTs leakage current including the poole-Frenkel effect [J].IEEE Transactions on Electron Devices, 2007, 54(11):2975-2983.[29] 程松华. ZnO薄膜晶体管有源层的磁控溅射制备研究 . 武汉:华中科技大学,2006.[30] Chang S J, Su Y K, Shei Y P. High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study [J].J. Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, 13(2):385-388.[31] Pimentel A, Fortunato E, Goncalves A, et al. Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices [J].Thin Solid Films, 2005, 487(1-2):212-215.[32] Yabuta H, Sano M, Abe K, et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].Appl. Phys. Lett.,2006, 89(11):112123(1-3).[33] Aoi T, Oka N, Sato Y, et al. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction [J].Thin Solid Films, 2010, 518:3004-3007.[34] Cross R B M, De Souza M M. Investigating the stability of zinc oxide thin film transistors [J].Appl. Phys. Lett.,2006, 89(26):263513(1-3).[35] Lee J M, Cho I T, Lee J H, et al. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].Appl. Phys. Lett.,2008, 93(9):093504(1-3).[36] Powell M J, Vanberkel C, Franklin A R, et al.Defect pool in amorphous-silicon thin-film transisters [J].Phys, Rev. B, 1992, 45(8):4160-4170.[37] 张新安,张景文,张伟风,等. 退火温度对ZnO薄膜晶体管电学性能的影响 [J]. 液晶与显示, 2009, 24(4):557-561.[38] Suresh A, Muth J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J].Appl. Phys. Lett., 2008, 92(3):033502(1-3).