Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films

SHI Xiao-fei; GUO Mei-xia; LIU Han-fa; GAO Jin-xia

doi:10.3788/YJYXS20112601.0054

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Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films

Device Technology & Physics | 更新时间：2020-08-12

- Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 1, Pages: 54-58(2011)
- 作者机构：
  
  山东理工大学理学院,山东淄博,255049
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20112601.0054
  CLC： O484
- Received：09 April 2010，
  
  Revised：05 May 2010，
  
  Published Online：20 February 2011，
  
  Published：20 February 2011
- 稿件说明：
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史晓菲, 郭美霞, 刘汉法, 高金霞. 溅射压强对钛镓共掺杂氧化锌透明导电薄膜性能的影响[J]. 液晶与显示, 2011,26(1): 54-58

SHI Xiao-fei, GUO Mei-xia, LIU Han-fa, GAO Jin-xia. Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films[J]. , 2011,26(1): 54-58
史晓菲, 郭美霞, 刘汉法, 高金霞. 溅射压强对钛镓共掺杂氧化锌透明导电薄膜性能的影响[J]. 液晶与显示, 2011,26(1): 54-58 DOI： 10.3788/YJYXS20112601.0054.

SHI Xiao-fei, GUO Mei-xia, LIU Han-fa, GAO Jin-xia. Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films[J]. , 2011,26(1): 54-58 DOI： 10.3788/YJYXS20112601.0054.

摘要

利用直流磁控溅射工艺在玻璃衬底上制备出了透过率高、电阻率较低的钛镓共掺杂氧化锌透明导电薄膜(TGZO)。研究了溅射压强对TGZO薄膜结构、形貌和光电性能的影响。研究结果表明

溅射压强对TGZO薄膜的结构和电阻率有重要影响。X射线衍射(XRD)表明

TGZO薄膜为具有

轴择优取向的六角纤锌矿结构多晶薄膜。薄膜的电阻率具有随着溅射压强的增大先减小

后增大的规律

在溅射压强为11 Pa时

实验获得的TGZO薄膜晶格畸变最小

电阻率具有最小值1.4810

-4

透过率具有最大值94.3%。实验制备的TGZO薄膜附着性能良好

在400~760 nm波长范围内的平均透过率都高于90%。

Abstract

Transparent conducting Ti

Ga co-doped zinc oxide films(TGZO) with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature. Micro-structural

optical and electrical properties of TGZO films were investigated. XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films. The electrical resistivity decreases when the sputtering pressure increases from 1.0 Pa to 11 Pa. When the sputtering pressure is 11 Pa

it is obtained that the lowest resistivity is 1.4810

-4

cm. The electrical resistivity increases when the sputtering pressure increases from 11 Pa to 16 Pa. All the films present a high transmittance of above 90% in the visible range.

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Keywords

references

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