Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn

GAO Yong-hui; JIANG Wen-long; DING Gui-ying; CONG Lin; MENG Zhao-hui; OUYANG Xin-hua; ZENG

doi:10.3788/YJYXS20112601.0044

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Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn

Device Technology & Physics | 更新时间：2020-08-12

- Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 1, Pages: 44-48(2011)
- 作者机构：
  
  1. 吉林师范大学信息技术学院,吉林四平,136000
  2. 华南理工大学化学与化工学院,广东广州,510641
- 作者简介：
- 基金信息：
  
  Supported by Jilin Province Education Department "
- DOI：10.3788/YJYXS20112601.0044
  CLC： TN383+.1
- Received：06 May 2010，
  
  Revised：02 June 2010，
  
  Published Online：20 February 2011，
  
  Published：20 February 2011
- 稿件说明：
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高永慧, 姜文龙, 丁桂英, 丛林, 孟昭晖, 欧阳新华, 曾和平. 基于NPBX掺杂CzHQZn的黄色有机电致发光器件[J]. 液晶与显示, 2011,26(1): 44-48

GAO Yong-hui, JIANG Wen-long, DING Gui-ying, CONG Lin, MENG Zhao-hui, OUYANG Xin-hua, ZENG He-ping. Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn[J]. , 2011,26(1): 44-48
高永慧, 姜文龙, 丁桂英, 丛林, 孟昭晖, 欧阳新华, 曾和平. 基于NPBX掺杂CzHQZn的黄色有机电致发光器件[J]. 液晶与显示, 2011,26(1): 44-48 DOI： 10.3788/YJYXS20112601.0044.

GAO Yong-hui, JIANG Wen-long, DING Gui-ying, CONG Lin, MENG Zhao-hui, OUYANG Xin-hua, ZENG He-ping. Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn[J]. , 2011,26(1): 44-48 DOI： 10.3788/YJYXS20112601.0044.

摘要

利用一种既具有空穴传输特性又具有发光特性的新型荧光染料

-乙基咔唑-2-乙烯基-8-羟基喹啉锌掺杂在NPBX中作为空穴传输层

CzHQZn同时还作为发光的主体

制备了结构为ITO/2T-NATA(30 nm)/NPBX ∶ 25%CzHQZn(

nm)/BCP(10 nm)/Alq

(60-

) nm/ LiF(0.5 nm)/Al的有机发光器件(

为掺杂发光层的厚度)

掺杂发光层的厚度按照15

30 nm进行变化

相应改变Alq

的厚度

使得这两者的总厚度为60 nm保持不变。当掺杂发光层的厚度是20 nm

Alq

的厚度是40 nm

其他层厚度保持不变时

器件在4 V电压下实现了黄光发射

色坐标为(0.514 6

0.470 5)

亮度是1.078 cd/m

。在14 V的电压下

器件最大发光亮度为449 0 cd/m

最大发光效率为0.98 cd/A。

Abstract

The performance of yellow organic light-emitting devices (OLEDs) based on a novel material with an emitting/hole-transporting layer as an acceptor was investigated. These devices were fabricated as follows: ITO/2T-NATA(30 nm)/NPBX ∶ 25% CzHQZn(

nm)/BCP(10 nm)/Alq

(60-

) nm/LiF(0.5 nm)/Al(

: the thickness of doping layer). The

is 15

30 nm

respectively

the thickness of Alq

is correspondingly changed

the total thickness of doping layer and Alq

is a constant of 60 nm.When

is 20 nm

the thickness of Alq

is 40 nm

a yellow OLED can be obtained with the CIE coordinates of (0.514 6

0.470 5)

the luminance of 1.078 cd/m

at 4 V. The maximum luminance is 449 0 cd/m

at 14 V

and the maximum luminous efficiency is 0.98 cd/A.

关键词

Keywords

references

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