White Organic Light-Emitting Diodes Based on Mixed Doping Emitting Layer

MA Ying; HAN Wei; ZHANG Fang-hui; YUAN Tao-li; LIU Ding-han; JIANG-Qian

doi:10.3788/YJYXS20112601.0040

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White Organic Light-Emitting Diodes Based on Mixed Doping Emitting Layer

Table of contents | 更新时间：2020-08-12

- White Organic Light-Emitting Diodes Based on Mixed Doping Emitting Layer
- Chinese Journal of Liquid Crystals and Displays Vol. 26, Issue 1, Pages: 40-43(2011)
- 作者机构：
  
  1. 陕西科技大学电气与信息工程学院,陕西西安 710021,E-mail:maying@sust.edu.cn
  2. 西安电力电子技术研究所,陕西西安,710061
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20112601.0040
  CLC： TN383+.1
- Received：12 May 2010，
  
  Revised：13 June 2010，
  
  Published：20 February 2011
- 稿件说明：
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马颖, 韩薇, 张方辉, 袁桃利, 刘丁涵, 蒋谦. 发光层混合掺杂的白光OLED器件[J]. 液晶与显示, 2011,26(1): 40-43

MA Ying, HAN Wei, ZHANG Fang-hui, YUAN Tao-li, LIU Ding-han, JIANG-Qian. White Organic Light-Emitting Diodes Based on Mixed Doping Emitting Layer[J]. 液晶与显示, 2011,26(1): 40-43
马颖, 韩薇, 张方辉, 袁桃利, 刘丁涵, 蒋谦. 发光层混合掺杂的白光OLED器件[J]. 液晶与显示, 2011,26(1): 40-43 DOI： 10.3788/YJYXS20112601.0040.

MA Ying, HAN Wei, ZHANG Fang-hui, YUAN Tao-li, LIU Ding-han, JIANG-Qian. White Organic Light-Emitting Diodes Based on Mixed Doping Emitting Layer[J]. 液晶与显示, 2011,26(1): 40-43 DOI： 10.3788/YJYXS20112601.0040.

摘要

制备了白光OLED器件

器件结构为:ITO/2T-NATA(15 nm)/NPB(25 nm)/ADN ∶ TBPe nm、 ADN ∶ TBPe ∶ DCJTB(

nm)/Alq

(20 nm)/LiF(1 nm)/Al(100 nm)。研究了ADN ∶ TBPE ∶ DCJTB层厚度从0~8 nm变化时对器件发光的影响。实验结果表明

当ADN ∶ TBPE ∶ DCJTB层厚度为0 时

器件发蓝光;随着ADN ∶ TBPE ∶ DCJTB层厚度的增加

器件发光的色坐标从蓝光区进入白光区

在ADN ∶ TBPE ∶ DCJTB层厚度为6~8 nm时得到色坐标较好的白光器件。

Abstract

A white organic light-emitting device was realized by using TBPe and DCJTB as fluorescent dopant. The configuration of the devices is ITO/2T-NATA(15 nm)/NPB(25 nm)/ADN ∶ TBPe

ADN ∶ TBPe ∶ DCJTB(

nm)/Alq

(20 nm)/LiF(1 nm)/Al(100 nm)

and the ADN ∶ TBPe/ADN ∶ TBPe ∶ DCJTB layer are used as emitting layer. The emission properties of devices by adjusting the thickness of ADN ∶ TBPe ∶ DCJTB layer has been researched. The results show that when the thickness of the ADN ∶ TBPe ∶ DCJTB layer gradually ranges from 2 nm to 8 nm

the electroluminescence spectra shift from blue-light region to white-light region. A white light with CIE coordinates of (0.38

0.34) was achieved when the ADN ∶ TBPe ∶ DCJTB layer was 8 nm

which is located in the white-light region.

关键词

Keywords

references

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Department of Electricity and Electronics, Shaanxi University of Science and Technology, Xi'an 710021, China,E-mail: ldinghan@163.

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