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Preventing method of film residue in PR ashing process based on ICP etcher
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 12, Pages: 1264-1269(2020)
- 作者机构：
合肥鑫晟光电科技有限公司, 安徽 合肥 230011
- 作者简介：
- 基金信息：
DOI：10.37188/YJYXS20203512.1264
CLC： TN141.9Received：19 March 2020，
Revised：09 August 2020，
Accepted：09 August 2020，
Published：2020-12
- 稿件说明：
移动端阅览
Fu-de ZHA, Chun-jie XU, Gen-fan LI, et al. Preventing method of film residue in PR ashing process based on ICP etcher[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1264-1269.
Fu-de ZHA, Chun-jie XU, Gen-fan LI, et al. Preventing method of film residue in PR ashing process based on ICP etcher[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1264-1269. DOI： 10.37188/YJYXS20203512.1264.
摘要
为改善TFT特性，采用感应耦合等离子体（ICP）设备进行4-Mask光刻胶（PR）灰化工艺，光刻胶剥离后源/漏数据线边缘、TFT沟道和其他像素区出现了线性的a-Si膜层残留。本文研究了光刻胶灰化工艺条件对a-Si膜层残留的影响，结果表明：压力、偏压射频功率是产生膜层残留的主要因素，O
2
用量为次要因素。通过光刻胶灰化工艺优化得出了改善膜层残留的条件：压力≥2.66 Pa，源极功率：偏压功率≥3：1，
q
v
（SF
6
）：
q
v
（O
2
）≥1：60，对感应耦合等离子体设备在光刻胶灰化工艺中的进一步应用具有非常重要的意义。
Abstract
In order to improve the characteristics of TFT
4-mask PR ashing process was carried out by indu cti vely coupled plasma etcher. After PR strip
linear a-Si film residue appeared on the edge of source/drain data line
TFT channel and other pixel area. The effect of PR ashing conditions on a-Si film residue was studied. The results show that the pressure and Bias RF power are the main factors to produce the film residue
and the amount of O
2
is the secondary factor. By adjusting the PR ashing recipe
the optimal condition for preventing film residue is obtained: Pressure ≥ 2.66 Pa
Source power:Bias power ≥ 3:1
q
v
(SF
6
):
q
v
(O
2
) ≥ 1:60. The research of inductive coupling plasma etcher in PR ashing process has very important significance for the further application.
关键词
Keywords
references
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