Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process

Hao LIU; Wei CHANG; Zhi-qiang WANG; Bo LIU

doi:10.37188/YJYXS20203512.1234

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Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process

Device Preparation & Detection | 更新时间：2020-12-04

- Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 12, Pages: 1234-1239(2020)
- 作者机构：
  
  重庆京东方光电科技有限公司, 重庆 400700
- 作者简介：
- 基金信息：
- DOI：10.37188/YJYXS20203512.1234
  CLC： TN321.5
- Received：05 June 2020，
  
  Revised：31 August 2020，
  
  Accepted：31 August 2020，
  
  Published：2020-12
- 稿件说明：
移动端阅览
Hao LIU, Wei CHANG, Zhi-qiang WANG, et al. Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1234-1239.
DOI：

Hao LIU, Wei CHANG, Zhi-qiang WANG, et al. Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1234-1239. DOI： 10.37188/YJYXS20203512.1234.

摘要

针对氧化物工艺形成的钝化层通孔柱状不良进行系统研究，发现通孔柱状不良发生的根本原因，并找到了有效改善措施。通过对比两种不同设计的通孔出现的差异推测通孔柱状不良可能与膜层结构相关，对相应的膜层进行去除验证，确定了通孔柱状不良为1ITO膜层导致。通过扫描电镜发现1ITO刻蚀后仍然有小颗粒ITO残留，对通孔柱状不良提出合理解释。最后在通孔柱状不良形成机理上，提出了有效改善措施。ITO结晶物无法被刻蚀液刻蚀，残留的ITO结晶物阻挡SiO

刻蚀，从而形成通孔柱状不良。ITO一旦结晶，延长1ITO刻蚀时间也不能改善柱状不良，通过降低ITO厚度可有效减轻通孔柱状不良，但仍然无法消除，通过加大钝化层刻蚀反应气体，可以有效将ITO结晶物反应抽出，彻底消除通孔柱状不良。

Abstract

The columnar defect of hole etching in oxide process was investigated in this study. The reason or sources which is responsible for the columnar defect was revealed and corresponding measures for avoiding columnar defect were effectively established.The primary reason for producing columnar defect might be related to film structure

which can be deduced from the differences between two kinds of hole. After uncovering each layer of the film

columnar defect was detected in ITO layer. The result of scanning electron microscopy (SEM) showed that small particles appeared on the ITO layer after hole etching. Based on the above-mentioned mechanism of columnar defect formation

three solutions were attempted to solve the issue. ITO crystal cannot be etched by etching solution and residual ITO crystals will impede SiO

etching

which will produce columnar defect. Once ITO crystal was formed

extending the etching time will not remove the columnar defect. Decreasing the thickness of ITO can partially eliminate the columnar defect while completely erasing the columnar defect and etching the ITO crystal can be achieved by increasing the etching gases in passivation layer etching process

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references

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