Laser annealing of metal oxide thin film transistor

Hong-long NING; Yu-xi DENG; Jian-lang HUANG; Zi-long LUO; Run-dong HU; Xian-zhe LIU; Yi-ping WANG; Tian QIU; Ri-hui YAO; Jun-biao PENG

doi:10.37188/YJYXS20203512.1211

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Laser annealing of metal oxide thin film transistor

Material Physic | 更新时间：2020-12-04

- Laser annealing of metal oxide thin film transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 12, Pages: 1211-1221(2020)
- 作者机构：
  
  1.华南理工大学发光材料与器件国家重点实验室, 高分子光电材料与器件研究所, 广东广州 510641
  2.南京航空航天大学机械结构力学及控制国家重点实验室, 江苏南京 210016
  3.五邑大学智能制造学部, 广东江门 529000
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(51771074);National Natural Science Foundation of China(61574061);Guangdong Major Project of Basic and Applied Basic Research(2019B030302007);Science and Technology Project of Guangzhou(201904010344);Fundamental Research Funds for the Central Universities(2019MS012);Ji Hua Laboratory Scientific Research Project(X190221TF191);2019 Guangdong University Student Science and Technology Innovation Special Fund ("Climbing Plan" Special Fund)(“攀登计划”专项资金：No.pdjh2019a0028);2019 Guangdong University Student Science and Technology Innovation Special Fund(pdjh2019b0041);National College Students Innovation and Entrepreneurship Training Program(201910561005);National College Students Innovation and Entrepreneurship Training Program(201910561007);South China University of Technology 100 Step Ladder Climbing Plan Research Project(j2tw201902475);South China University of Technology 100 Step Ladder Climbing Plan Research Project(j2tw201902203)
- DOI：10.37188/YJYXS20203512.1211
  CLC： TN249
- Received：17 June 2020，
  
  Revised：18 August 2020，
  
  Accepted：18 August 2020，
  
  Published：2020-12
- 稿件说明：
移动端阅览
Hong-long NING, Yu-xi DENG, Jian-lang HUANG, et al. Laser annealing of metal oxide thin film transistor[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1211-1221.
DOI：

Hong-long NING, Yu-xi DENG, Jian-lang HUANG, et al. Laser annealing of metal oxide thin film transistor[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1211-1221. DOI： 10.37188/YJYXS20203512.1211.

摘要

金属氧化物薄膜晶体管（MOTFT）具有较高的载流子迁移率（10~100 cm

/V·s），且薄膜均匀性好、制备温度低和可见光透明的优点，被认为是最有前途的新一代TFT。激光退火因具有能量高、速度快、对衬底损伤小和退火范围可控的特点，相比传统热退火，更适用于柔性和大尺寸背板的制备。本文综述了有关金属氧化物薄膜及MOTFT激光退火的研究进展；详细讨论了激光退火中的关键参数；系统阐述了激光对金属氧化物薄膜的作用以及激光对MOTFT性能的影响。最后，总结了现在激光退火技术存在的问题以及发展方向。

Abstract

The metal oxide thin film transistor (MOTFT) has the advantages of high carrier mobility (10~100 cm

/V·s)

good thin film uniformity

low preparation temperature and transparent visible light. It is the most promising new generation TFT. Laser annealing has the characteristics of high energy

short time

low damage to the substrate and controllable processing range. According to the traditional thermal continuous

it is more suitable to produce flexible and large-size panels. The research progress of laser annealing discusses in detail the key parameters that affect the inversion effect in laser annealing; the effect of laser on metal oxide thin film and the effect of laser on the performance of MOTFT are systematically decomposed. Finally

the problems and development directions of current laser annealing technology are summarized.

关键词

Keywords

references

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