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Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance
- Chinese Journal of Liquid Crystals and Displays Vol. 35, Issue 11, Pages: 1103-1109(2020)
- 作者机构：
1.福州大学 至诚学院, 福建 福州 350002
2.福建卫生职业技术学院, 福建 福州 350101
- 作者简介：
- 基金信息：Education and Scientific Research Project for Young and Middle-aged Teachers of Education Department of Fujian Province(JT180812);Special Research for Vocational Education on Both Sides of the Taiwan Strait(FJJKHX17-072)
DOI：10.37188/YJYXS20203511.1103
CLC： TN321.5Received：25 April 2020，
Revised：01 June 2020，
Accepted：01 June 2020，
Published：05 November 2020
- 稿件说明：
移动端阅览
Qian YANG, Shi-yuan DU, Rui BIAN. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese journal of liquid crystals and displays, 2020, 35(11): 1103-1109.
Qian YANG, Shi-yuan DU, Rui BIAN. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese journal of liquid crystals and displays, 2020, 35(11): 1103-1109. DOI： 10.37188/YJYXS20203511.1103.
摘要
基于固态电解质的金属氧化物薄膜晶体管具有良好的环境稳定性和优异的电学性能，因而具有巨大的应用潜力。针对传统基于固态电解质金属氧化物薄膜晶体管调控方式工艺复杂、制备时间长的问题，本文采用高
k
固态电解质Ta
2
O
5
作为栅绝缘层，透明氧化铟锡（ITO）作为有源层以及源漏电极，在沉积半导体层和电极之前，利用飞秒激光对Ta
2
O
5
绝缘层薄膜进行照射处理。探究了不同激光强度对固态电解质金属氧化物晶体管电学性能的影响。随着激光强度的提高，晶体管的开态电流提高，阈值电压负向漂移。同时，本文进一步探索了激光对固态电解质晶体管突触性能的影响，兴奋性后突触电流（EPSC）随着激光强度的增强而增加。XPS测试表明，Ta
2
O
5
薄膜中氧空位含量增多，从而导致器件电导的变化。本文利用激光优异的加工处理速度和对材料性能的精确控制，提出了一种简单、快速（
<
1 s）、低温（
<
45℃）地调控晶体管性能的方式。
Abstract
The solid-electrolyte based metal-oxide thin film transistors has huge potential due to its good environment stability and excellent electrical performance. However
the sophisticated fabrication process and time consuming are the main drawbacks involved in the traditional method to modulate the electrical performance of solid-electrolyte based metal-oxide thin film transistors. Laser processing on the materials provides excellent processing speed and precise control. The metal-oxide thin film transistor was realized utilizing high
k
solid electrolyte as dielectric layer and transparent indium tin oxide (ITO) as semiconductor layer. Prior to the deposition of active layer and electrodes
fs-laser was induced to irradiate on the surface of Ta
2
O
5
dielectric layer. As the intensity of laser irradiation increased
the
I
ON
of the transistor was enhanced and the threshold voltage was negatively drifted. In addition
the Excitatory Post Synaptic Current(EPSC) of the solid-electrolyte based metal-oxide thin film transistors was studied under different laser intensities. The EPSC was significantly increased as the laser intensity enhanced. Meanwhile
XPS results showed that the amount of oxygen vacancies could be controlled via laser irradiation. A simple
fast(
<
1 s) and low-temperature(
<
45 ℃) method was proposed to modulate the performance of thin film transistors.
关键词
Keywords
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