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华南理工大学 材料科学与工程学院, 广东 广州 510640
Received:06 January 2020,
Revised:10 March 2020,
Accepted:10 March 2020,
Published:2020-08
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Li-juan CAO, Cong-biao JIANG, Yu LUO, et al. All-solution processed quantum dot light-emitting diodes with low turn-on voltage[J]. Chinese journal of liquid crystals and displays, 2020, 35(8): 785-794.
Li-juan CAO, Cong-biao JIANG, Yu LUO, et al. All-solution processed quantum dot light-emitting diodes with low turn-on voltage[J]. Chinese journal of liquid crystals and displays, 2020, 35(8): 785-794. DOI: 10.37188/YJYXS20203508.0785.
采用旋涂制备的纳米银(Silver nanoparticle,Ag NPs)作为阴极,制备了全溶液加工的红、绿、蓝量子点发光二极管(red,green,blue-quantum dots light-emitting diodes,R-,G-,B-QLEDs)。并针对溶液加工Ag NPs阴极器件启亮电压(Turn-on voltage,
V
t
)较蒸镀Ag阴极器件偏高的问题,采用了低真空与热退火组合工艺干燥Ag NPs阴极,实现了可以与真空蒸镀金属阴极比拟的
V
t
,R-,G-,B-QLEDs的
V
t
分别为1.9,2.6,3.2 V。实验结果表明,该阴极处理工艺可能为研制低
V
t
的全印刷显示发光器件提供新的工艺思路。
All-solution processed red
green
blue-quantum dot light-emitting diodes (R-
G-
B-QLEDs) were fabricated by using spin-coated silver nanoparticles (Ag NPs) as the cathode. In order to solve the higher turn-on voltage (
V
t
) compared to QLEDs with vacuum deposited Ag cathode
a combination of low-vacuum and thermal annealing drying process was used to dry the Ag NPs cathode. With this new process
the
V
t
of R-
G-
B-QLEDs was reduced to 1.9 V
2.6 V
3.2 V
respectively
which was comparable to the devices with vacuum deposited Ag cathode. The results show that the cathode treatment process may provide a new process idea for fabricating fully printing display light-emitting devices with low
V
t
.
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