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Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors
Device Physics and Device Preparation | 更新时间：2024-09-10
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    • Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors

    • “在显示技术领域，研究人员基于实验数据建立了非晶铟镓锌氧TFT器件仿真模型，提出了改进型反相器电路，显著提升了速度稳定性。”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 9, Pages: 1182-1191(2024)

    • DOI：10.37188/CJLCD.2024-0177    

      CLC： TN321+.5

    • Published：05 September 2024，

      Received：18 June 2024，

      Revised：25 July 2024，

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  • JIANG Shu, ZHANG Tianhao, WEI Xiaomin, et al. Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors. [J]. Chinese Journal of Liquid Crystals and Displays 39(9):1182-1191(2024) DOI： 10.37188/CJLCD.2024-0177.

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