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Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors
Device Physics and Device Preparation | 更新时间：2024-09-10

    • Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors

    • “In the field of display technology, researchers have established a simulation model of amorphous indium gallium zinc oxide TFT devices based on experimental data, proposed an improved inverter circuit, and significantly improved speed stability.”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 9, Pages: 1182-1191(2024)

    • DOI：10.37188/CJLCD.2024-0177    

      CLC： TN321+.5

    • Received：18 June 2024，

      Revised：25 July 2024，

      Published：05 September 2024

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  • JIANG Shu, ZHANG Tianhao, WEI Xiaomin, et al. Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2024, 39(9): 1182-1191. DOI： 10.37188/CJLCD.2024-0177.

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