Driving technique of electroluminescent devices by complex switching circuits

Long MAO; Zhi-yi HE; Yan ZHENG; Shi-yu GUO

doi:10.37188/CJLCD.2021-0334

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Driving technique of electroluminescent devices by complex switching circuits

Driving and Controlling | 更新时间：2022-06-14

- Driving technique of electroluminescent devices by complex switching circuits
- Chinese Journal of Liquid Crystals and Displays Vol. 37, Issue 4, Pages: 444-450(2022)
- 作者机构：
  
  1.桂林电子科技大学信息与通信学院，广西桂林 541004
  2.桂林电子科技大学广西无线宽带通信与信号处理重点实验室，广西桂林 541004
  3.上海科润光电材料有限公司，上海 200233
- 作者简介：
- 基金信息：
  
  the National Natural ScienceFoundation of China(61961008);Guangxi Key Laboratory of Wireless Broadband Communication and Signal Processing(GXKL06190103);Graduate Research Innovation Project of Guilin University of Electronic Technology(2022YCXS035)
- DOI：10.37188/CJLCD.2021-0334
  CLC： TM923
- Received：21 December 2021，
  
  Revised：22 February 2022，
  
  Published：05 April 2022
- 稿件说明：
移动端阅览
Long MAO, Zhi-yi HE, Yan ZHENG, et al. Driving technique of electroluminescent devices by complex switching circuits[J]. Chinese journal of liquid crystals and displays, 2022, 37(4): 444-450.
DOI：

Long MAO, Zhi-yi HE, Yan ZHENG, et al. Driving technique of electroluminescent devices by complex switching circuits[J]. Chinese journal of liquid crystals and displays, 2022, 37(4): 444-450. DOI： 10.37188/CJLCD.2021-0334.

摘要

设计了一种柔性电致发光（EL）器件驱动电源的复合开关电路。EL器件表现为容性负载，造成其交流驱动电源开关电路中晶体管开通瞬间很大的尖峰电流而易烧毁，降低了驱动电源可靠性。因此使用瞬时电流容量大的可控硅（SCR）充当驱动电源电路的主开关管，在其阳极-阴极两端并联MOS管延迟导通/关断，起到分流和短接可控硅的作用，从而使可控硅在开通之后能够关断。适当调节MOS管延迟开关时间错开尖峰电流且使两种开关管的温升相等或相近，进一步提高这种可控硅-MOS管复合开关电路的可靠性。

Abstract

A composite switching circuit for flexible electroluminescent （EL） device driver was designed. The EL devices behave as capacitive loads， resulting in the transistors’ breaking down by the high peak current of the transistors at the instant as they are turned on and thus low reliability of the drivers. The thyristors （SCRs） with higher transient current capacity were employed as the main switching devices for the driver， in parallel connection to the MOSFETs. The MOSFETs play the roles of current shunt and short-circuiting， thereby turn off the thyristors after being turned on. The MOSFETs can stay off the peak current and the two kinds of transistor， both the thyristors and MOSFETs， could have the same or nearly the same temperature rise by properly adjusting the delay time of the MOSFETs， further improve the reliability of this composite thyristor-MOSFET switching circuit.

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references

朱小平，于长凤，张脉官，等 . 无机电致发光材料的制备方法与研究现状［J］. 中国陶瓷， 2006 ， 42 （ 10 ）： 19 - 23 ． doi: 10.3969/j.issn.1001-9642.2006.10.006 http://dx.doi.org/10.3969/j.issn.1001-9642.2006.10.006

ZHU X P ， YU C F ， ZHANG M G ， et al . Preparation technique and investigation status of inorganic electroluminescent materials ［J］. China Ceramics ， 2006 ， 42 （ 10 ）： 19 - 23 . （in Chinese） . doi: 10.3969/j.issn.1001-9642.2006.10.006 http://dx.doi.org/10.3969/j.issn.1001-9642.2006.10.006

凤岚，徐伟军 . 液晶显示器背光源的现状及发展［J］. 真空电子技术， 2007 （ 6 ）： 46 - 51 ． doi: 10.3969/j.issn.1002-8935.2007.06.013 http://dx.doi.org/10.3969/j.issn.1002-8935.2007.06.013

FENG L ， XU W J . Current situation and future development of LCD backlight ［J］. Vacuum Electronics ， 2007 （ 6 ）： 46 - 51 . （in Chinese） . doi: 10.3969/j.issn.1002-8935.2007.06.013 http://dx.doi.org/10.3969/j.issn.1002-8935.2007.06.013

覃雪玲，何志毅，何宁 . 大功率LED效率特性分析与驱动方案设计［J］. 液晶与显示， 2012 ， 27 （ 3 ）： 371 - 377 ． doi: 10.3788/YJYXS20122703.0371 http://dx.doi.org/10.3788/YJYXS20122703.0371

QIN X L ， HE Z Y ， HE N . Efficiency characteristic analysis and driving scheme design of power LEDs ［J］. Chinese Journal of Liquid Crystals and Display ， 2012 ， 27 （ 3 ）： 371 - 377 . （in Chinese） . doi: 10.3788/YJYXS20122703.0371 http://dx.doi.org/10.3788/YJYXS20122703.0371

廖建军，宋超 . 一种恒压恒流开关电源设计［J］. 电工技术， 2021 （ 10 ）： 168 - 171，174 ．

LIAO J J ， SONG C . Design of a constant voltage and current switching power supply ［J］. Electric Engineering ， 2021 （ 10 ）： 168 - 171， 174 . （in Chinese）

赵辉，徐红波 . MOSFET开关损耗分析［J］. 电子设计工程， 2015 ， 23 （ 23 ）： 138 - 140 ． doi: 10.3969/j.issn.1674-6236.2015.23.044 http://dx.doi.org/10.3969/j.issn.1674-6236.2015.23.044

ZHAO H ， XU H B . MOSFET switching loss analysis ［J］. Electronic Design Engineering ， 2015 ， 23 （ 23 ）： 138 - 140 . （in Chinese） . doi: 10.3969/j.issn.1674-6236.2015.23.044 http://dx.doi.org/10.3969/j.issn.1674-6236.2015.23.044

KHANNA V K . Insulated Gate Bipolar Transistor IGBT Theory and Design ［M］. Hoboken ： Wiley-IEEE Press ， 2003 ： 1 - 10 . doi: 10.1002/047172291x http://dx.doi.org/10.1002/047172291x

钱照明，张军明，盛况 . 电力电子器件及其应用的现状和发展［J］. 中国电机工程学报， 2014 ， 34 （ 29 ）： 5149 - 5161 ． doi: 10.13334/j.0258-8013.pcsee.2014.29.017 http://dx.doi.org/10.13334/j.0258-8013.pcsee.2014.29.017

QIAN Z M ， ZHANG J M ， SHENG K . Status and development of power semiconductor devices and its applications ［J］. Proceedings of the CSEE ， 2014 ， 34 （ 29 ）： 5149 - 5161 . （in Chinese） . doi: 10.13334/j.0258-8013.pcsee.2014.29.017 http://dx.doi.org/10.13334/j.0258-8013.pcsee.2014.29.017

BALIGA B J . Fundamentals of Power Semiconductor Devices ［M］. Berlin ： Springer ， 2008 ： 51 - 87 . doi: 10.1007/978-0-387-47314-7 http://dx.doi.org/10.1007/978-0-387-47314-7

周琪钧，田冕，刘超，等 . 亚阈电流对MOS栅控晶闸管d V /d t 抗性的影响［J］. 电子与封装， 2020 ， 20 （ 8 ）： 080402 ． doi: 10.16257/j.cnki.1681-1070.2020.0808 http://dx.doi.org/10.16257/j.cnki.1681-1070.2020.0808

ZHOU Q J ， TIAN M ， LIU C ， et al . Effect of sub-threshold current on d V /d t immunity of MOS-controlled thyristor ［J］. Electronics & Packaging ， 2020 ， 20 （ 8 ）： 080402 . （in Chinese） . doi: 10.16257/j.cnki.1681-1070.2020.0808 http://dx.doi.org/10.16257/j.cnki.1681-1070.2020.0808

蒋富贵，何志毅 . LED照明电源的驱动技术与应用［J］. 桂林电子科技大学学报， 2013 ， 33 （ 5 ）： 358 - 362 ． doi: 10.3969/j.issn.1673-808X.2013.05.004 http://dx.doi.org/10.3969/j.issn.1673-808X.2013.05.004

JIANG F G ， HE Z Y . LED lighting power drive technologies and applications ［J］. Journal of Guilin University of Electronic Technology ， 2013 ， 33 （ 5 ）： 358 - 362 . （in Chinese） . doi: 10.3969/j.issn.1673-808X.2013.05.004 http://dx.doi.org/10.3969/j.issn.1673-808X.2013.05.004

犹元彬，何志毅 . 电致发光屏的低损耗开关电源驱动技术研究［J］. 照明工程学报， 2020 ， 31 （ 3 ）： 112 - 114，170 ． doi: 10.3969/j.issn.1004-440X.2020.03.021 http://dx.doi.org/10.3969/j.issn.1004-440X.2020.03.021

YOU Y B ， HE Z Y . Studies on driving technology of low loss switching power supply for electroluminescent panel ［J］. China Illuminating Engineering Journal ， 2020 ， 31 （ 3 ）： 112 - 114， 170 . （in Chinese） . doi: 10.3969/j.issn.1004-440X.2020.03.021 http://dx.doi.org/10.3969/j.issn.1004-440X.2020.03.021

姜天林 . 可控硅的使用及其方法［J］. 科技创新与应用， 2014 （ 6 ）： 79 ． doi: 10.1016/j.eti.2021.101489 http://dx.doi.org/10.1016/j.eti.2021.101489

JIANG T L . The use of thyristor and its method ［J］. Technology Innovation and Application ， 2014 （ 6 ）： 79 . （in Chinese） . doi: 10.1016/j.eti.2021.101489 http://dx.doi.org/10.1016/j.eti.2021.101489

黄月强，吕长志，谢雪松，等 . 一种IGBT热阻的测量方法［J］. 电力电子技术， 2010 ， 44 （ 9 ）： 104 - 105，108 ． doi: 10.3969/j.issn.1000-100X.2010.09.041 http://dx.doi.org/10.3969/j.issn.1000-100X.2010.09.041

HUANG Y Q ， LV C Z ， XIE X S ， et al . One measurement method of thermal resistance of IGBT ［J］. Power Electronics ， 2010 ， 44 （ 9 ）： 104 - 105， 108 . （in Chinese） . doi: 10.3969/j.issn.1000-100X.2010.09.041 http://dx.doi.org/10.3969/j.issn.1000-100X.2010.09.041

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