Mechanism research and improvement on V-crosstalk of high resolution and large size TFT-LCD

Zi-mo SHENG; Yu-jie GAO; Xin LIU; Jun FENG; Ning ZHU; Xiao-xiao CHEN; Hui-bin GUO; Peng JIANG

doi:10.37188/CJLCD.2021-0254

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Mechanism research and improvement on V-crosstalk of high resolution and large size TFT-LCD

Display Technologyand Applications | 更新时间：2022-01-19

- Mechanism research and improvement on V-crosstalk of high resolution and large size TFT-LCD
- Chinese Journal of Liquid Crystals and Displays Vol. 37, Issue 1, Pages: 37-44(2022)
- 作者机构：
  
  武汉京东方光电科技有限公司，湖北武汉 430040
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2021-0254
  CLC： TN141.9
- Received：14 October 2021，
  
  Revised：05 November 2021，
  
  Published：2022-01
- 稿件说明：
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Zi-mo SHENG, Yu-jie GAO, Xin LIU, et al. Mechanism research and improvement on V-crosstalk of high resolution and large size TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2022, 37(1): 37-44.
DOI：

Zi-mo SHENG, Yu-jie GAO, Xin LIU, et al. Mechanism research and improvement on V-crosstalk of high resolution and large size TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2022, 37(1): 37-44. DOI： 10.37188/CJLCD.2021-0254.

摘要

随着生活质量的提升，大尺寸、高刷新频率、高分辨率的显示器件越来越受到人们的青睐。然而，高规格产品同时也会伴随更多的显示问题，垂直串扰就是其中一种。垂直串扰产生原因主要是由于数据线与像素电极之间的耦合电容

以及薄膜晶体管(TFT)关闭时的漏电流

off

使像素电压发生偏移。高分辨率8 K产品由于其存储电容大幅减小、布线密集程度增大，导致其垂直串扰现象严重。本文通过软件模拟了

的影响因子，再结合不同像素电极2ITO交叠面积样品的反置现象确定

的影响程度，同时通过改变各项工艺参数确定最佳存储电容及漏电流条件，最后在最佳存储电容及漏电流条件下探讨与之匹配的2ITO交叠面积。在所有最优工艺条件下，不良比率由最初的55.6%下降至4.2%，画质大幅改善。

Abstract

With the improvement of the quality of life

large-size

high-refresh frequency

and high-resolution display devices are becoming more and more popular. However

high-spec products are also accompanied by more display problems

and vertical crosstalk is one of them. One of the cause of vertical crosstalk is mainly due to the coupling capacitor

between the data line and the pixel electrode

another cause is the leakage current when the TFT is turned off (

off

). The great reduction in storage capacitance (

) and increase in line density of high-resolution products (8 K) result in serious vertical crosstalk. This paper simulates the influence factor of

through software

and also determine the influence of

based on the phenomenon of the samples with different pixel electrodes 2ITO overlap. At the same time

the best storage capacitance and leakage current conditions are determined by changing various process parameters; with the optimum storage capacitor and leakage current process parameters

the matching 2ITO overlap is also discussed. With all the optimal process parameters

the defect ratio drops from the initial 55.6% to 4.2%

and the image quality is greatly improved.

关键词

Keywords

references

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