- About Journal
- Articles Online
- For Authors
- For Referees
- 个人中心
- 退出登录
浏览全部资源
扫码关注微信
- About Journal
- Overview
- Editorial Board
- Database Index
- Metrics
- Articles Online
- Online First
- Current Issue
- Archive
- Special Issue
- Virtual Issue
- Recommend
- Download Ranking
- View Ranking
- Cited Ranking
- For Authors
- Guide for Authors
- Data Sharing
- Templates for Authors
- Manusript Process
- Ethics for Authors
- For Referees
- Guide for Referees
- Review Process
- Ethics for Referees
Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 12, Pages: 1623-1629(2021)
- 作者机构：
1.吉林建筑大学 电气与计算机学院, 吉林省建筑电气综合节能重点实验室, 吉林 长春 130118
2.吉林建筑大学 寒地建筑综合节能教育部重点实验室, 吉林 长春 130118
3.吉林师范大学, 吉林 四平 136099
- 作者简介：
- 基金信息：Supported by Jilin Fundamental Research Funds under the Guidance of the Central Government for Local Scientific and Technological Development(202002012JC);Jilin Scientific and Technological Development Program(20200201177JC);Science and Technology Research Project of Jilin Provincial Development of Education(JJKH20210256KJ);Science and Technology Research Project of Jilin Provincial Development of Education(JJKH20210277KJ);JScience and Technology Research Project of Jilin Provincial Development of Education(JJKH20210276KJ)
DOI：10.37188/CJLCD.2021-0211
CLC： TN321.5;TH691.9Received：08 August 2021，
Revised：13 September 2021，
Published：2021-12
- 稿件说明：
移动端阅览
Chao WANG, Fu-nan LIU, Fan YANG, et al. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(12): 1623-1629.
Chao WANG, Fu-nan LIU, Fan YANG, et al. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(12): 1623-1629. DOI： 10.37188/CJLCD.2021-0211.
摘要
为了有效提高薄膜晶体管的电学性能，采用了高介电常数的材料代替传统的SiO
2
作为栅介质。相比传统的SiO
2
薄膜，Ta
2
O
5
薄膜具有较大的介电常数，又能够与传统的半导体制备工艺很好地兼容，有很大潜力成为新一代的栅介质材料，更适用于新一代薄膜晶体管的发展。采用磁控溅射方法制备了Ta
2
O
5
薄膜，并以Ta
2
O
5
作为栅介质制备了AZO-TFT。研究了氧氩比条件对Ta
2
O
5
薄膜性质的影响，以及对AZO-TFT电学性能的影响；分析了Ta
2
O
5
薄膜的表面形貌及粗糙度对薄膜晶体管性能的影响；最后，对比了SiO
2
栅介质与Ta
2
O
5
栅介质薄膜晶体管的电学性能。实验结果表明：氧氩比为10∶90时Ta
2
O
5
栅介质TFT器件电学性能最优，与传统SiO
2
栅介质TFT相比，电流开关比由1.02×10
3
提升到2×10
4
，亚阈值摆幅从5 V·dec
-1
降到1.5 V·dec
-1
，迁移率从1.6 cm
2
/（V·s）增加到12.2 cm
2
/（V·s），器件电学性能得到一定改善。
Abstract
In order to improve the electrical performance of the thin film transistors
a kind of high dielectric constant material is used instead of the conventional SiO
2
as the gate dielectric. Compared with the SiO
2
Ta
2
O
5
has a high-
k
value with semiconductor process compatibility
which exhibits the potential to overcome the problem of leakage current and thereby become a new generation of gate dielectric materials. Firstly
Ta
2
O
5
thin films were prepared by magnetron sputtering. AZO-TFTs were fabricated with Ta
2
O
5
as gate dielectric. Then
the effects of oxygen to argon ratio on the properties of Ta
2
O
5
thin films and the electrical properties of AZO-TFT were studied. The influence of surface morphology and roughness of Ta
2
O
5
thin films on the performance of thin film transistors was analyzed. Finally
the electrical properties of SiO
2
gate dielectric and Ta
2
O
5
gate dielectric thin film transistors were compared. Experimental results indicate that the performance of TFT is the best when the oxygen argon ratio of TFT is 10:90. Compared with the TFT using SiO
2
as the insulating layer
the on-off current radio of TFT with Ta
2
O
5
as the insulating layer increases from 1.02×10
3
to 2×10
4
. The subthreshold swing decreases from 5 V·dec
-1
to 1.5 V·dec
-1
. The field effect mobility increases from 1.6 cm
2
/(V·s) to 12.2 cm
2
/(V·s). The electrical performance of the TFT has been improved to some extent.
关键词
Keywords
references
李 欣予 , 王 若铮 , 吴 胜利 , 等 . 绝缘层材料及结构对薄膜晶体管性能的影响 . 液晶与显示 , 2017 . 32 ( 5 ): 344 - 351 . DOI: 10.3788/YJYXS20173205.0344 http://doi.org/10.3788/YJYXS20173205.0344 .
X Y LI , R Z WANG , S L WU , 等 . Effect of insulating layer material and structure on performance of thin film transistors . Chinese Journal of Liquid Crystals and Displays , 2017 . 32 ( 5 ): 344 - 351 . DOI: 10.3788/YJYXS20173205.0344 http://doi.org/10.3788/YJYXS20173205.0344 .
张幸福. 氧化钽高 K 薄膜的制备、结构和光、电性能的研究[D]. 广州: 广东工业大学, 2008.
ZHANG X F. Research on preparation and properties of tantalum oxide high-K films[D]. Guangzhou: Guangdong University of Technology, 2008. (in Chinese)
M STONEHAMA , J L GAVARTIN , A L SHLUGER . The oxide gate dielectric: do we know all we should? . Journal of Physics: Condensed Matter , 2005 . 17 ( 21 ): S2027 - S2049 . DOI: 10.1088/0953-8984/17/21/001 http://doi.org/10.1088/0953-8984/17/21/001 .
翁 寿松 . 高 K 绝缘层研究动态 . 微纳电子技术 , 2005 . 42 ( 5 ): 220 - 223, 248 . DOI: 10.3969/j.issn.1671-4776.2005.05.006 http://doi.org/10.3969/j.issn.1671-4776.2005.05.006 .
S S WENG . Recent researching trends in the high- K insulating layer . Micronanoelectronic Technology , 2005 . 42 ( 5 ): 220 - 223, 248 . DOI: 10.3969/j.issn.1671-4776.2005.05.006 http://doi.org/10.3969/j.issn.1671-4776.2005.05.006 .
B K SHARMA , J H AHN . Flexible and stretchable oxide electronics . Advanced Electronic Materials , 2016 . 2 ( 8 ): 1600105 DOI: 10.1002/aelm.201600105 http://doi.org/10.1002/aelm.201600105 .
陶 瑞强 , 姚 日晖 , 朱 峰 , 等 . 薄膜晶体管中高性能HfO 2 的低温制备研究 . 真空科学与技术学报 , 2016 . 36 ( 8 ): 862 - 865 . https://www.cnki.com.cn/Article/CJFDTOTAL-ZKKX201608003.htm https://www.cnki.com.cn/Article/CJFDTOTAL-ZKKX201608003.htm .
R Q TAO , R H YAO , F ZHU , 等 . Fabrication of thin film transistor with high performance HfO 2 coatings synthesized at low temperature . Chinese Journal of Vacuum Science and Technology , 2016 . 36 ( 8 ): 862 - 865 . https://www.cnki.com.cn/Article/CJFDTOTAL-ZKKX201608003.htm https://www.cnki.com.cn/Article/CJFDTOTAL-ZKKX201608003.htm .
姚 日晖 , 郑 泽科 , 曾 勇 , 等 . 基于柔性显示器件的氧化铝介电层室温制备 . 光学学报 , 2017 . 37 ( 3 ): 0331001 https://www.cnki.com.cn/Article/CJFDTOTAL-GXXB201703045.htm https://www.cnki.com.cn/Article/CJFDTOTAL-GXXB201703045.htm .
R H YAO , Z K ZHENG , Y ZENG , 等 . Preparation of Al 2 O 3 dielectric layers at room temperature based on flexible displays . Acta Optica Sinica , 2017 . 37 ( 3 ): 0331001 https://www.cnki.com.cn/Article/CJFDTOTAL-GXXB201703045.htm https://www.cnki.com.cn/Article/CJFDTOTAL-GXXB201703045.htm .
R H YAO , Z K ZHENG , M XIONG , 等 . Low-temperature fabrication of sputtered high- k HfO 2 gate dielectric for flexible a-IGZO thin film transistors . Applied Physics Letters , 2018 . 112 ( 10 ): 103503 DOI: 10.1063/1.5022088 http://doi.org/10.1063/1.5022088 .
钟 云肖 , 周 尚雄 , 姚 日晖 , 等 . 旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用 . 发光学报 , 2018 . 39 ( 2 ): 214 - 219 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm .
Y X ZHONG , S X ZHOU , R H YAO , 等 . Fabrication of Zirconia dielectric layer by spin coating and its application in thin film transistor . Chinese Journal of Luminescence , 2018 . 39 ( 2 ): 214 - 219 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm .
王 东平 , 谢 应涛 , 欧阳 世宏 , 等 . 薄膜晶体管中绝缘层的研究现状与趋势 . 液晶与显示 , 2016 . 31 ( 4 ): 380 - 385 . DOI: 10.3788/YJYXS20163104.0380 http://doi.org/10.3788/YJYXS20163104.0380 .
D P WANG , Y T XIE , S H OUYANG , 等 . Research status and trends of insulating layer in thin-film transistor . Chinese Journal of Liquid Crystals and Displays , 2016 . 31 ( 4 ): 380 - 385 . DOI: 10.3788/YJYXS20163104.0380 http://doi.org/10.3788/YJYXS20163104.0380 .
ZHANGL , J LI , X W ZHANG , 等 . High performance ZnO-thin-film transistor with Ta 2 O 5 dielectrics fabricated at room temperature . Applied Physics Letters , 2009 . 95 ( 7 ): 072112 DOI: 10.1063/1.3206917 http://doi.org/10.1063/1.3206917 .
F ZHOU , L ZHANG , J LI , 等 . Effect of Ta 2 O 5 thickness on the performances of ZnO-based thin film transistors . Chinese Journal of Luminescence , 2011 . 32 ( 2 ): 188 - 193 . DOI: 10.3788/fgxb20113202.0188 http://doi.org/10.3788/fgxb20113202.0188 .
J J YU , J Y ZHANG , I W BOYD . UV annealing of ultrathin tantalum oxide films . Applied Surface Science , 2002 . 186 ( 1/4 ): 57 - 63 . http://www.researchgate.net/profile/Ian_Boyd/publication/248191874_UV_annealing_of_ultrathin_tantalum_oxide_films/links/53e0e99b0cf2d79877a50bde.pdf http://www.researchgate.net/profile/Ian_Boyd/publication/248191874_UV_annealing_of_ultrathin_tantalum_oxide_films/links/53e0e99b0cf2d79877a50bde.pdf .
于 龙宇 , 王 伟 , 刘 孟杰 , 等 . 原位沉积温度对电子束蒸镀Ta 2 O 5 薄膜性能的影响 . 半导体技术 , 2020 . 45 ( 8 ): 632 - 637 . https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ202008010.htm https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ202008010.htm .
L Y YU , W WANG , M J LIU , 等 . Effects of in-situ deposition temperature on performances of Ta 2 O 5 thin films prepared by electron beam evaporation . Semiconductor Technology , 2020 . 45 ( 8 ): 632 - 637 . https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ202008010.htm https://www.cnki.com.cn/Article/CJFDTOTAL-BDTJ202008010.htm .
吕起鹏. 离子束溅射沉积Ta 2 O 5 /SiO 2 光学薄膜应力特性与应力形变调控研究[D]. 大连: 大连理工大学, 2019.
LV Q P. Study on stress properties and stress deformation control of Ta 2 O 5 /SiO 2 optical films deposited by ion beam sputtering[D]. Dalian: Dalian University of Technology, 2019. (in Chinese)
陈 胜龙 , 杨 建广 , 高 亮 . Ta 2 O 5 薄膜制备的研究现状及进展 . 材料导报 , 2010 . 24 ( 1 ): 25 - 30 . https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB201001005.htm https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB201001005.htm .
S L CHEN , J G YANG , L GAO . Recent situation and progress in preparation of Ta 2 O 5 film . Materials Review , 2010 . 24 ( 1 ): 25 - 30 . https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB201001005.htm https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB201001005.htm .
才玺坤. 金属氧化物薄膜的电学特性及其在薄膜晶体管中的应用[D]. 杭州: 浙江大学, 2012.
CAI X K. Electrical properties of metal oxide thin films and application in TFTs[D]. Hangzhou: Zhejiang University, 2012. (in Chinese)
朱春丹. 基于水性超薄ZrO 2 高κ介电层的薄膜晶体管的制备与研究[D]. 青岛: 青岛大学, 2017.
ZHU C D. The fabrication and research on thin film transistor based on water-induced amorphous high-k ZrO 2 Dielectric[D]. Qingdao: Qingdao University, 2017. (in Chinese)
喻先坤. ZnO及In 2 O 3 薄膜晶体管的研究[D]. 开封: 河南大学, 2014.
YU X K. Study on ZnO and In 2 O 3 thin film transistors[D]. Kaifeng: Henan University, 2014. (in Chinese)
S Y LEE , S CHANG , J S LEE . Role of high-k gate insulators for oxide thin film transistors . Thin Solid Films , 2009 . 518 ( 11 ): 3030 - 3032 . http://www.sciencedirect.com/science?_ob=ShoppingCartURL&_method=add&_eid=1-s2.0-S0040609009016368&originContentFamily=serial&_origin=article&_ts=1433951823&md5=c7a9fbb9b01a0324672b36d169b3e167 http://www.sciencedirect.com/science?_ob=ShoppingCartURL&_method=add&_eid=1-s2.0-S0040609009016368&originContentFamily=serial&_origin=article&_ts=1433951823&md5=c7a9fbb9b01a0324672b36d169b3e167 .
0
Views
179
下载量
0
CSCD
- L-PDFDownload
- Meta-XMLDownload
- BibTeXDownload
- EndnoteDownload
- RefMan Download
- NoteExpressDownload
- NoteFirstDownload
Publicity Resources
Related Articles
Related Author
Related Institution
AI问答- Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
- Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
- Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17
京公网安备11010802024621 - It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
- Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
