Oxide thin-film transistors based on printed double-layer electrodes

Yi-long LIN; Si-ting CHEN; Yong-bo WU; Lin-feng LAN; Jun-biao PENG

doi:10.37188/CJLCD.2021-0116

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Oxide thin-film transistors based on printed double-layer electrodes

Device Physicsand Device Preparation | 更新时间：2021-09-10

- Oxide thin-film transistors based on printed double-layer electrodes
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 9, Pages: 1239-1246(2021)
- 作者机构：
  
  华南理工大学发光材料与器件国家重点实验室, 广东广州 510640
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62022034);National Natural Science Foundation of China(22090024)
- DOI：10.37188/CJLCD.2021-0116
  CLC： TN321.5;TH691.9
- Received：26 April 2021，
  
  Revised：18 May 2021，
  
  Published：2021-09
- 稿件说明：
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Yi-long LIN, Si-ting CHEN, Yong-bo WU, et al. Oxide thin-film transistors based on printed double-layer electrodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(9): 1239-1246.
DOI：

Yi-long LIN, Si-ting CHEN, Yong-bo WU, et al. Oxide thin-film transistors based on printed double-layer electrodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(9): 1239-1246. DOI： 10.37188/CJLCD.2021-0116.

摘要

为满足印刷显示的大面积制备、低信号延迟的需求，有必要开发应用于氧化物薄膜晶体管（TFTs）的低电阻印刷电极。研究发现喷墨打印Ag和氧化物有源层的界面接触特性较差，导致基于Ag电极的氧化物TFT性能很差。通过在Ag电极和有源层中间插入喷墨打印的氧化铟锡（ITO）电极，可以阻隔Ag纳米颗粒扩散入有源层。此外，ITO电极可以与Ag和有源层形成良好的接触特性，大幅降低了接触电阻。基于Ag/ITO双层电极的TFT较基于单层Ag电极的性能大幅提升：迁移率达16.0 cm

·V

-1

·s

-1

，开关比达6.2×10

，亚阈值摆幅为174 mV/Decade，阈值电压为-2.0 V。该结果证明了印刷Ag电极在氧化物TFT的应用潜力，并有助于建立导电氧化物薄膜和金属导电纳米材料堆叠结构的复合导电薄膜体系，实现优势互补。

Abstract

To meet the requirement of low signal delay of the large-size printed display

it is necessary to develop low-resistance printed electrodes for oxide thin film transistors(TFTs). It is found that the interface contact between inkjet-printed Ag and the active layer is poor

which leads to the poor electrical performance of oxide TFT with the Ag electrode. By inserting inkjet-printed indium tin oxide (ITO) electrode between the Ag electrode and the active layer

the diffusion of Ag nanoparticles in the active layer can be blocked. In addition

the ITO electrode can form good contact characteristics with Ag and the active layer

greatly reducing the contact resistance. The performance of TFT based on Ag/ITO double-layer electrodes is significantly improved compared with that based on single-layer silver electrode: mobility of 16.0 cm

·V

-1

·s

-1

switching ratio of 6.2×10

subthreshold swing of 174 mV/Decade

and threshold voltage of -2.0 V. The results demonstrate the application potential of printed Ag electrode in oxide TFT

and contribute to the establishment of a composite conductive film system of stacked structure of metallic conductive nanomaterials and conductive oxide film

realizing complementary advantages.

关键词

Keywords

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