Modulation of surface composition of polymer walls and its effect on optoelectronic properties of polymer wall liquid crystal device

Xiang XIA; Hong-bo LU; Chao MA; Xue-lian LIU; Long-zhen QIU; Miao XU; Jun ZHU; Guo-bing ZHANG

doi:10.37188/CJLCD.2021-0068

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Modulation of surface composition of polymer walls and its effect on optoelectronic properties of polymer wall liquid crystal device

Device Physicsand Device Preparation | 更新时间：2021-09-10

- Modulation of surface composition of polymer walls and its effect on optoelectronic properties of polymer wall liquid crystal device
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 9, Pages: 1247-1254(2021)
- 作者机构：
  
  1.特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院, 安徽合肥 230009
  2.安徽省先进功能材料与器件重点实验室, 合肥工业大学化学与化工学院, 安徽合肥 230009
  3.合肥工业大学仪器科学与光电工程学院, 安徽合肥 230009
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2021-0068
  CLC： O753.2;TB324
- Received：12 March 2021，
  
  Revised：26 March 2021，
  
  Published：2021-09
- 稿件说明：
移动端阅览
Xiang XIA, Hong-bo LU, Chao MA, et al. Modulation of surface composition of polymer walls and its effect on optoelectronic properties of polymer wall liquid crystal device[J]. Chinese journal of liquid crystals and displays, 2021, 36(9): 1247-1254.
DOI：

Xiang XIA, Hong-bo LU, Chao MA, et al. Modulation of surface composition of polymer walls and its effect on optoelectronic properties of polymer wall liquid crystal device[J]. Chinese journal of liquid crystals and displays, 2021, 36(9): 1247-1254. DOI： 10.37188/CJLCD.2021-0068.

摘要

本文探究了单体与液晶的相容性对聚合物墙表面组成的影响和表面组成对聚合物墙液晶器件光电性能的影响及其调控方法。选取与液晶相容性相差较大但表面能相近的单体，通过表面引发聚合形成与液晶分层的聚合物薄膜，洗去液晶后用反应离子刻蚀在聚合物表面刻蚀出不同深度。通过衰减全反射红外光谱和X射线光电子能谱仪表征不同深度的组分。最后利用掩模版制备聚合物墙液晶器件，并探究聚合墙表面组成对其光电性能的影响。实验结果表明：在聚合物-液晶界面处富集与液晶相容性高的聚合物组分，并且聚合光强越低，这种组分偏析效果越明显，当聚合光强较低时，聚合物表面组成中的PTFEMA组分占比为68.5%，比高光强时的多出10.6%。聚合物墙的表面组成对液晶器件的光电性能有一定的影响，当光强为10 mW/cm

时器件的阈值电压为0.879 V，而在70 mW/cm

光强时升高到1.172 V。可以利用单体与液晶的相容性差异以及光强调控聚合物墙表面组成，进而影响液晶器件的光电性能。

Abstract

The effect of the compatibility of monomer and liquid crystal on the surface composition of the polymer wall was explored

and the effect of the surface composition on the optoelectronic properties of polymer wall liquid crystal devices and its control method were investigated. Monomers with a large difference in compatibility with liquid crystals but similar surface energy are selected. Polymer films delaminated with liquid crystals are formed by surface initiation

and the polymer are etched to different depths by reactive ion etching after washing away the liquid crystals. The components of the polymer layer with different etching depths were characterized by Attenuated Total Reflection and X-ray photoelectron spectrometer. Polymer wall liquid crystal devices were prepared and the effect of polymer surface composition on their optoelectronic properties was investigated. The experimental results indicate that polymer components with high compatibility with liquid crystals are enriched at the polymer-liquid crystal interface

and the lower the polymerization light intensity

the more pronounced the bias effect of such components. When the polymerization light intensity is low

PTFEMA component in the polymer surface composition is 68.5%

which is 10.6% more than that at high light intensity. This resulted in a difference in the optoelectronic properties of the polymer wall liquid crystal devices prepared at different polymerization light intensities

with a threshold voltage of 0.879 V at a light intensity of 10 mW/cm

and an increase to 1.172 V at 70 mW/cm

light intensity. Polymer wall surface composition can be regulated by the compatibility difference between the monomer and the liquid crystal and the light intensity

which could influence the photoelectric performance of the liquid crystal device.

关键词

Keywords

references

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Related Author

Hong-bo LU

Chao MA

Xue-lian LIU

Long-zhen QIU

Miao XU

Jun ZHU

Guo-bing ZHANG

Xiang XIA

Related Institution

National Engineering Laboratory of Special Display Technology， National Key Laboratory of Advanced Display Technology， Academy of Opto-Gelectronic Technology， Hefei University of Technology

Key Laboratory of advanced functional materials and devices of Anhui Province， College of chemistry and chemical engineering， Hefei University of technology

College of Instrument Science and Optoelectronic Engineering， Hefei University of technology

College of Chemistry and Chemical Engineering， Hefei University of Technology

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