Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors

Zhi-chao RAO; Xiu-mei WANG; Ya-qian LIU; En-long LI; Reng-jian YU; Hui-peng CHEN; Guo-cheng ZHANG

doi:10.37188/CJLCD.2021-0029

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Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors

Device Physics and Device Preparation | 更新时间：2021-08-05

- Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 8, Pages: 1093-1100(2021)
- 作者机构：
  
  1.福州大学平板显示技术国家地方联合工程实验室, 福建福州 350102
  2.福建工程学院微电子技术研究中心, 福建福州 350108
- 作者简介：
- 基金信息：
  
  Natural Science Foundation of Fujian Province(2017J05097);Natural Science Foundation of Fujian Province(2018J01535);Research Startup Foundation(GY-Z20041)
- DOI：10.37188/CJLCD.2021-0029
  CLC： TN321.5;TH691.9
- Received：30 January 2021，
  
  Revised：14 March 2021，
  
  Published：2021-08
- 稿件说明：
移动端阅览
Zhi-chao RAO, Xiu-mei WANG, Ya-qian LIU, et al. Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(8): 1093-1100.
DOI：

Zhi-chao RAO, Xiu-mei WANG, Ya-qian LIU, et al. Impact of plasma treatment of dielectric layer on synaptic performance of organic thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(8): 1093-1100. DOI： 10.37188/CJLCD.2021-0029.

摘要

在冯·诺依曼架构陷入瓶颈的时代背景下，受生物神经启发而演化的人工突触器件获得了广泛关注，加速了人们迈向人工智能时代的脚步。本文通过在P型有机薄膜晶体管（OTFT）绝缘层SiO

表面进行等离子处理，探究了界面处理引入羟基对OTFT突触性能的影响。具体对绝缘层不同等离子处理时长的OTFT进行了突触行为的模拟和对比，包括兴奋性后突触后电流（EPSC）、双脉冲易化（PPF）、长程可塑性（LTP）等。突触特性的产生是由于等离子处理给半导体层/绝缘层界面引入的羟基对电子进行了捕获。而随着等离子处理时间的增加，绝缘层表面更多的羟基使得OTFT表现出更强的记忆和保持能力、更高的线性度，更有利于其在类脑学习、神经计算等方面的应用。

Abstract

Under the background of the bottleneck of

Neumann architecture

artificial synaptic devices inspired by biological nerve have gained extensive attention to accelerate people's steps towards the era of artificial intelligence. In this study

the effect of hydroxyl group on the synaptic performance of p-type organic thin film transistor (OTFT) is investigated by plasma treatment on the surface of SiO

dielectric layer. The synaptic behaviors of OTFTs with different plasma treatment time are simulated and compared

including Excitatory Post-Synaptic Current(EPSC)

Paired Pulse Facilitation(PPF) and Long-term Potentiation(LTP). The generation of synaptic properties is due to the electrons being trapped by the hydroxyl groups introduced into the semiconductor layer/dielectric layer interface by plasma treatment. With the increase of plasma treatment time

more hydroxyl groups on the surface of the dielectric layer make OTFTs exhibit better memory and retention capabilities

and higher linearity

which is more conducive to its application in brain-like learning and neural computing.

关键词

Keywords

references

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Zhi-chao RAO

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Related Institution

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