Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors

Guo-feng FENG; Wen ZHANG; Cheng-yuan DONG

doi:10.37188/CJLCD.2020-0305

您当前的位置：

首页 >

文章列表页 >

Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors

Device Physics and Device Preparation | 更新时间：2021-04-28

- Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 5, Pages: 649-655(2021)
- 作者机构：
  
  上海交通大学电子工程系, 上海 200240
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2020-0305
  CLC： TN321.5
- Received：13 November 2020，
  
  Revised：15 January 2021，
  
  Published：2021-05
- 稿件说明：
移动端阅览
Guo-feng FENG, Wen ZHANG, Cheng-yuan DONG. Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 649-655.
DOI：

Guo-feng FENG, Wen ZHANG, Cheng-yuan DONG. Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 649-655. DOI： 10.37188/CJLCD.2020-0305.

摘要

为了探究环境湿度对非晶铟镓锌氧薄膜晶体管（a-IGZO TFT）的负偏压光照（NBIS）稳定性的影响，本文使用非密闭腔室进行不同波长光照射下以及不同相对湿度下的TFT负偏压测试。介绍了a-IGZO TFT的基本结构以及实验所用

I-V

测试系统。测试了不同波长光照条件下a-IGZO TFT的转移特性曲线以及相同波长光照射下不同相对湿度的转移特性曲线。实验结果表明：a-IGZO TFT的转移特性曲线随着电压偏置时间的增加而发生负偏；随着光照波长的减小，器件阈值电压负漂越明显。随着相对湿度增加，a-IGZO TFT的NBIS不稳定性逐渐降低，但其电学特性发生了严重的劣化。在相对湿度为50%，光照波长为400 nm时，a-IGZO TFT的NBIS电学特性最好，其在负偏压时间为1 500 s时的阈值电压偏移为15 V。

Abstract

In order to explore the influence of environmental humidity on the stability of the negative bias illumination (NBIS) of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFT)

the paper employed an unsealed chamber to carry on TFT's negative bias tress test under the illumination of lights of different wavelengths and different relative humidity. First

the basic structure of a-IGZO TFT and the

I-V

test system used in the experiment were introduced. Next

we tested the transfer characteristic curve of a-IGZO TFT under the illumination of light of different wavelengths and the transfer characteristic curve of different relative humidity under the illumination of the light of the same wavelength. The experimental results showed that the transfer characteristic curve of a-IGZO TFT shifted negatively as the voltage bias time increased. With the decrease of the wavelength of light

the device threshold voltage had a more significant negative drift. As the relative humidity increases

the NBIS instability of a-IGZO TFT gradually decreased but its electrical characteristics have seriously deteriorated. Environmental humidity has a significant impact on the stability of a-IGZO TFT's NBIS. When the relative humidity was 50% and the light wavelength was 400 nm

the threshold voltage shift of a-IGZO TFT reached 15 V while the negative voltage has stressed for 1 500 s

which showed the best performance under negative bias illumination stress.

关键词

Keywords

references

K NOMURA , H OHTA , A TAKAGI , 等 . Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors . Nature , 2004 . 432 ( 7016 ): 488 - 492 . DOI: 10.1038/nature03090 http://doi.org/10.1038/nature03090 .

陈龙龙 , 张建华 , 李喜峰 , 等 . 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究 . 液晶与显示 , 2015 . 30 ( 5 ): 796 - 800 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20153005.0796 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20153005.0796 .

L L CHEN , J H ZHANG , X F LI , 等 . Process and properties of oxide IGZO TFT device based on flexible PI substrate . Chinese Journal of Liquid Crystals and Displays , 2015 . 30 ( 5 ): 796 - 800 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20153005.0796 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20153005.0796 .

M KIM , J H JEONG , H J LEE , 等 . High mobility bottom gate InGaZnO thin film transistors with SiO x etch stopper . Applied Physics Letters , 2007 . 90 ( 21 ): 212114 DOI: 10.1063/1.2742790 http://doi.org/10.1063/1.2742790 .

孙明剑 , 董承远 , 林锡勳 . 薄膜晶体管平坦化层干法刻蚀工艺的研究 . 液晶与显示 , 2019 . 34 ( 11 ): 1055 - 1060 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20193411.1055 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20193411.1055 .

M J SUN , C Y DONG , S S LIN . Dry etching for the planarization layer of thin film transistors . Chinese Journal of Liquid Crystals and Displays , 2019 . 34 ( 11 ): 1055 - 1060 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20193411.1055 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20193411.1055 .

徐宏霞 , 邹忠飞 , 董承远 . 一种新型a-IGZO TFT集成栅极驱动电路设计 . 液晶与显示 , 2018 . 33 ( 12 ): 996 - 1001 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20183312.0996 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20183312.0996 .

H X XU , Z F ZOU , C Y DONG . Novel integrated gate driver design based on a-IGZO TFTs . Chinese Journal of Liquid Crystals and Displays , 2018 . 33 ( 12 ): 996 - 1001 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20183312.0996 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20183312.0996 .

S PARK , E N CHO , I YUN . Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors . Journal of the Society for Information Display , 2013 . 21 ( 8 ): 333 - 338 . DOI: 10.1002/jsid.170 http://doi.org/10.1002/jsid.170 .

P T LIU , Y T CHOU , L F TENG . Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress . Applied Physics Letters , 2009 . 95 ( 23 ): 233504 DOI: 10.1063/1.3272016 http://doi.org/10.1063/1.3272016 .

T C CHEN , T C CHANG , T Y HSIEH , 等 . Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor . Applied Physics Letters , 2011 . 99 ( 2 ): 022104 DOI: 10.1063/1.3609873 http://doi.org/10.1063/1.3609873 .

J XU , Q WU , L XU , 等 . Investigation on ambient degradation of amorphous InGaZnO thin film transistors in an unsealed chamber . International Display Workshop , 2015 . 1 ( 15 ): 313 - 316 . http://or.nsfc.gov.cn/handle/00001903-5/154828 http://or.nsfc.gov.cn/handle/00001903-5/154828 .

M D H CHOWDHURY , P MIGLIORATO , J JANG . Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors . Applied Physics Letters , 2013 . 102 ( 14 ): 143506 DOI: 10.1063/1.4801762 http://doi.org/10.1063/1.4801762 .

W S KIM , Y H LEE , Y J CHO , 等 . Effect of wavelength and intensity of light on a-InGaZnO TFTs under negative bias illumination stress . ECS Journal of Solid State Science and Technology , 2017 . 6 ( 1 ): Q6 - Q9 . DOI: 10.1149/2.0021701jss http://doi.org/10.1149/2.0021701jss .

Y ZHOU , J XU , H XIE , 等 . Moisture dominant electrical degradation of amorphous InGaZnO thin film transistors under positive bias stress . International Display Workshop , 2017 . 424 - 426 .

吴崎 , 许玲 , 董承远 . 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究 . 液晶与显示 , 2016 . 31 ( 4 ): 375 - 379 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20163104.0375 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20163104.0375 .

Q WU , L XU , C Y DONG . Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors . Chinese Journal of Liquid Crystals and Displays , 2016 . 31 ( 4 ): 375 - 379 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20163104.0375 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20163104.0375 .

J F SHI , C Y DONG , W J DAI , 等 . The influence of RF power on the electrical properties of sputtered amorphous In-Ga-Zn-O thin films and devices . Journal of Semiconductors , 2013 . 34 ( 8 ): 084003 DOI: 10.1088/1674-4926/34/8/084003 http://doi.org/10.1088/1674-4926/34/8/084003 .

H OH , S M YOON , M K RYU , 等 . Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor . Applied Physics Letters , 2011 . 98 ( 3 ): 033504 DOI: 10.1063/1.3540500 http://doi.org/10.1063/1.3540500 .

J N XU , Q WU , L XU , 等 . Ambient effect on thermal stability of amorphous InGaZnO thin film transistors . Solid-State Electronics , 2016 . 126 170 - 174 . DOI: 10.1016/j.sse.2016.08.001 http://doi.org/10.1016/j.sse.2016.08.001 .

S J KIM , S Y LEE , Y W LEE , 等 . Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress . Electrochemical and Solid-State Letters , 2012 . 15 ( 4 ): H108 - H110 . DOI: 10.1149/2.026204esl http://doi.org/10.1149/2.026204esl .

Y J CHO , W S KIM , Y H LEE , 等 . Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination . Solid-State Electronics , 2018 . 144 95 - 100 . DOI: 10.1016/j.sse.2018.03.009 http://doi.org/10.1016/j.sse.2018.03.009 .

Views

264

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Laser annealing of metal oxide thin film transistor

Research and improvement on ESD of TFT-LCD rubbing process

Research and solution of ESD problem for a GOA product

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

Related Author

Guo-feng FENG

Wen ZHANG

Chen-yuan DONG

Xian-zhe LIU

Run-dong HU

Zi-long LUO

Jian-lang HUANG

Yu-xi DENG

Related Institution

Department of Electronic Engineering， Shanghai Jiao Tong University

Luminescent Materials and Devices, South China University of Technology

State Key Laboratory of Mechanics and Control of Mechanical Structures

Department of Intelligent Manufacturing, Wuyi University

Cell Department of Hefei BOE Display Technology Co., Ltd.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰