Improvement of reflectivity of vertical alignment liquid crystal on silicon

Wen-juan LI; Yu-qiang GUO; Hong-mei MA; Yu-bao SUN

doi:10.37188/CJLCD.2020-0303

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Improvement of reflectivity of vertical alignment liquid crystal on silicon

Device Physics and Device Preparation | 更新时间：2021-07-13

- Improvement of reflectivity of vertical alignment liquid crystal on silicon
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 7, Pages: 947-953(2021)
- 作者机构：
  
  1.河北工业大学电子材料与器件天津重点实验室, 天津 300401
  2.北京航空航天大学仪器科学与光电工程学院, 北京 100191
  3.河北工业大学应用物理系, 天津 300401
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2020-0303
  CLC： TN141.9
- Received：12 November 2020，
  
  Revised：05 February 2021，
  
  Published：2021-07
- 稿件说明：
移动端阅览
Wen-juan LI, Yu-qiang GUO, Hong-mei MA, et al. Improvement of reflectivity of vertical alignment liquid crystal on silicon[J]. Chinese journal of liquid crystals and displays, 2021, 36(7): 947-953.
DOI：

Wen-juan LI, Yu-qiang GUO, Hong-mei MA, et al. Improvement of reflectivity of vertical alignment liquid crystal on silicon[J]. Chinese journal of liquid crystals and displays, 2021, 36(7): 947-953. DOI： 10.37188/CJLCD.2020-0303.

摘要

为了提升垂直排列硅上液晶(VA-LCoS)器件的反射率，本文通过建立常黑型VA-LCoS的三维光学模型，分别用圆偏振光和线偏振光入射，研究了预倾角、液晶盒厚和入射光波长对VA-LCoS器件的反射率的影响。结果表明：使用圆偏振光入射能彻底消除亮态像素内黑色区域。本文条件下，1.6

m盒厚的VA-LCoS在圆偏振光入射时有最大的反射率。本研究的结论对VA-LCoS的设计和制备具有一定的指导意义。

Abstract

To improve the reflectivity of vertical alignment Liquid Crystal on Silicon (VA-LCoS)

we built a three-dimensional (3D) optical modeling for the normally black VA-LCoS mode

and investigated the effects of the gap of liquid crystal cell

the pretilt angle of liquid crystal and wavelength of incident light on reflection for linearly polarized light and circle polarized light as incident light

respectively. As a result

the black zone in the on-state pixel was eliminated by using circle polarized light as incident light. Moreover

the VA-LCoS has the highest reflection as the cell gap is 1.6

m. The results have an important guiding significance for the design and preparation of VA-LCoS.

关键词

Keywords

references

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Related Author

Wen-juan LI

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Yu-bao SUN

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Related Institution

Department of Applied Physics，Hebei University of Technology

School of Instrumentation Science and Opto-electronics Engineering， Beihang University

Tianjin Key Laboratory of Electronic Materials and Devices， Hebei University of Technology

Chongqing School， University of Chinese Academy Sciences

Chongqing Institute of Green and Intelligent Technology， Chinese Academy of Sciences

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