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1.中国科学院 理化技术研究所, 北京 100190
2.中国科学院大学, 北京 100049
Received:09 October 2020,
Accepted:10 November 2020,
Published:2021-01
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Lei TIAN, Zhi-yi LI, Guan-hao LIU, et al. Progress of electron injection of ITO cathode for inverted organic light-emitting diodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(1): 39-52.
Lei TIAN, Zhi-yi LI, Guan-hao LIU, et al. Progress of electron injection of ITO cathode for inverted organic light-emitting diodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(1): 39-52. DOI: 10.37188/CJLCD.2020-0264.
在有机发光二极管(OLEDs)30多年的发展过程中,器件结构设计和功能材料开发是实现器件高效率发光的关键。倒置结构器件被认为是实现OLEDs器件高效率、长寿命的一种可行方案。但倒置器件以ITO为阴极造成了器件电子注入势垒过大,限制了倒置器件的进一步发展。本文以实现倒置器件电子注入原理的不同,分别介绍了n型掺杂、偶极层修饰和隧穿注入等方法在提高ITO阴极电子注入性能的相关研究工作。最后,对提高倒置器件电子注入性能的3种不同策略进行了总结和展望。
The design of device structure and the development of functional materials are the keys to achieve high efficiency organic light emitting diodes (OLEDs) over the past 30 years. Inverted structure device is considered to be a feasible solution for OLEDs to realize high efficiency and long lifetime. However
the electron injection barrier from the ITO cathode to organic layer is large
which limits the further development of the inverted device. In this paper
we introduce the related research work of n-type doping
dipole layer modification and tunneling injection
which bases on the different mechanisms of electron injection for inverted devices. Finally
three different strategies to improve the electron injection performance of inverted devices are summarized and prospected.
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