Remain of photoresist in halftone process based on TFT-LCD technology

Lei JIANG; Xue-yong HUANG; Liang-jun LIU; Guang-sheng LI; Jian WANG; Xiang-feng LI; Shao-shuai MU; Bo SHAO

doi:10.37188/CJLCD.2020-0151

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Remain of photoresist in halftone process based on TFT-LCD technology

Device Physics & Device Preparation | 更新时间：2021-02-07

- Remain of photoresist in halftone process based on TFT-LCD technology
- Chinese Journal of Liquid Crystals and Displays Vol. 36, Issue 2, Pages: 258-264(2021)
- 作者机构：
  
  成都中电熊猫显示科技有限公司, 四川成都 610200
- 作者简介：
- 基金信息：
- DOI：10.37188/CJLCD.2020-0151
  CLC： TN141.9
- Received：11 June 2020，
  
  Revised：29 August 2020，
  
  Accepted：29 August 2020，
  
  Published：2021-02
- 稿件说明：
移动端阅览
Lei JIANG, Xue-yong HUANG, Liang-jun LIU, et al. Remain of photoresist in halftone process based on TFT-LCD technology[J]. Chinese journal of liquid crystals and displays, 2021, 36(2): 258-264.
DOI：

Lei JIANG, Xue-yong HUANG, Liang-jun LIU, et al. Remain of photoresist in halftone process based on TFT-LCD technology[J]. Chinese journal of liquid crystals and displays, 2021, 36(2): 258-264. DOI： 10.37188/CJLCD.2020-0151.

摘要

在四次光刻工艺中，半光刻制程中光刻胶膜残量的控制，对于TFT沟道形貌以及电学特性至关重要。因此，本文研究了在氧化物TFT-LCD四次光刻工艺中，影响半光刻制程中光刻胶剩余量的关键因子，通过全因子实验设计，得到了预烘温度、减压干燥的快抽时间和显影时间的最优组合，再通过单因子实验优化出最优曝光量。结果表明，该实验设计可有效优化半光刻后光刻胶的剩余量及均一性，并获得理想的实验条件组合。当预烘温度、减压干燥快抽时间、显影时间以及曝光量分别为115℃、10 s、52 s和67 mJ/cm

时，光刻胶剩余量可以控制在0.51

m，线宽为11.17

m，均一性良好（

5%）。

Abstract

In four mask process

it is extremely critical to control the photoresist remain of halftone zone for the morphology and electrical properties of TFT. Therefore

this study focused on the key factors of photoresist remain in four mask process based on oxide-TFT technology. Firstly

the optimal conditions of soft-bake temperature

vacuum drying time and developing time are obtained

via

full factorial experiment. Furthermore

the ideal quantity of exposure is evaluated through single factor test. The results show that the experiment design could effectively optimize the remain and uniformity of photoresist

so that the ideal experiment conditions aere obtained. When the soft bake temperature

vacuum drying time

developing time and exposure are 115℃

10 s

52 s and 67 mJ/cm

respectively

the PR remain and CD are 0.51

m and 11.17

which exhibites good uniformity (

5%).

关键词

Keywords

references

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