The new study of black matrix thinner for TFT-LCD was presented in this paper. Based on the normal process technology
breaking through the limits of equipments and process bottlenecks
the affection of thinner black matrix critical dimension was worked out by adding phase shift mask and back exposure. The results show that black matrix critical dimension could be reduced 1.0~1.5 m by applied on phase shift mask that decreased the diffraction of transmission edge area. Because the back exposure technology could cure the black matrix material
the black matrix critical dimension was reduced 0.3~0.5 m. By the new technology and equipment applied
the black matrix critical dimension was decreased 1.5~2.0 m at total
which meets the requirements of high quality transmit and contrast.
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references
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