Preparation and characterization of N doped P-type MgZnO film

GAO Li-li; LIU Jun-sheng; ZHANG Miao; ZHANG Yue-lin

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Preparation and characterization of N doped P-type MgZnO film

更新时间：2020-08-12

- Preparation and characterization of N doped P-type MgZnO film
- Chinese Journal of Liquid Crystals and Displays Vol. 29, Issue 4, Pages: 499-503(2014)
- 作者机构：
  
  1. 北华大学物理学院,吉林吉林,132013
  2. 吉林大学物理学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by Jilin Province Education Department "Twelfth Five-Year"
- DOI：
  CLC： O472
- Received：15 April 2014，
  
  Revised：12 May 2014，
  
  Published：05 August 2014
- 稿件说明：
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高丽丽, 刘军胜, 张淼, 张跃林. N掺杂p型MgZnO薄膜的制备与性能研究[J]. 液晶与显示, 2014,29(4): 499-503

GAO Li-li, LIU Jun-sheng, ZHANG Miao, ZHANG Yue-lin. Preparation and characterization of N doped P-type MgZnO film[J]. , 2014,29(4): 499-503
高丽丽, 刘军胜, 张淼, 张跃林. N掺杂p型MgZnO薄膜的制备与性能研究[J]. 液晶与显示, 2014,29(4): 499-503 DOI：

GAO Li-li, LIU Jun-sheng, ZHANG Miao, ZHANG Yue-lin. Preparation and characterization of N doped P-type MgZnO film[J]. , 2014,29(4): 499-503 DOI：

摘要

利用磁控溅射设备，Mg

0.04

0.96

O陶瓷靶材，以高纯的氮气与氩气混合气体作为溅射气体，在石英衬底上沉积获得了N掺杂p型Mg

0.07

0.93

O薄膜，薄膜的电阻率为21.47 cm，载流子浓度为8.3810

-3

，迁移率为3.45 cm

/（Vs）。研究了该薄膜的结构与光学性能。实验结果显示，其拉曼光谱中出现了位于272和642 cm

-1

左右与N

相关的振动模。低温光致发光光谱中，可以观察到位于3.201，3.384和3.469 eV的3个发光峰，其中位于3.384 eV的发光峰归因为导带电子到缺陷能级的复合发光，而位于3.469 eV的发光峰归因为受主束缚激子（A

X）的辐射复合，这说明该N掺杂MgZnO薄膜的空穴载流子主要来自N

受主的贡献。

Abstract

Using 99.99% pure nitrogen and argon as sputtering gas

p-type N doped Mg

0.07

0.93

O film was deposited on quartz substrate by radio frequency magnetron sputtering with Mg

0.04

0.96

O target. The film has resistivity of 21.47 cm

Hall mobility of 3.45 cm

/(Vs) and carrier concentration of 8.3810

-3

.The structure and optical properties of this film were studied.The Raman peaks of the N for O site (N

) at 272 and 642 cm

-1

were observed in the Raman spectrum. At the low tempe-rature (80 K)

the photoluminescence spectrum of the p-type MgZnO:N film showed three emission peaks centered at 3.201

3.384 and 3.469 eV

respectively. The 3.384 eV peak should originate mainly from recombining by conducting electrons to the defect level while the 3.469 eV peak originated mainly from acceptor bound exciton (A

X) emission. It can be deduced that the p-type conduction of this N doped Mg

0.07

0.93

O film was primary attributed to N

acceptor defects.

关键词

Keywords

references

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Stability of P-type conductivity in nitrogen-doped MgZnO thin film

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Related Author

GAO Li-li

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Related Institution

College of Physics, Beihua University, Jilin 132013, China

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