Anneal skip of ITO layer in TFT-LCD

ZHANG Jia-xiang; LU Kai; GUO Jian; JIANG Xiao-hui; CUI Yu-lin; WANG Liang; YAN Chang-jiang

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Anneal skip of ITO layer in TFT-LCD

Device Physics & Device Technology | 更新时间：2020-08-12

- Anneal skip of ITO layer in TFT-LCD
- Chinese Journal of Liquid Crystals and Displays Vol. 29, Issue 1, Pages: 55-59(2014)
- 作者机构：
  
  北京京东方光电科技有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN141.9
- Received：21 February 2013，
  
  Revised：22 March 2013，
  
  Published：15 February 2014
- 稿件说明：
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张家祥, 卢凯, 郭建, 姜晓辉, 崔玉琳, 王亮, 阎长江, 曲连杰, 陈旭, 闵泰烨, 苏顺康. TFT-LCD器件氧化铟锡层无退火工艺研究[J]. 液晶与显示, 2014,29(1): 55-59

ZHANG Jia-xiang, LU Kai, GUO Jian, JIANG Xiao-hui, CUI Yu-lin, WANG Liang, YAN Chang-jiang, QU Lian-jie, CHEN Xu, MIN Tai-ye, SU Shun-kang. Anneal skip of ITO layer in TFT-LCD[J]. , 2014,29(1): 55-59
张家祥, 卢凯, 郭建, 姜晓辉, 崔玉琳, 王亮, 阎长江, 曲连杰, 陈旭, 闵泰烨, 苏顺康. TFT-LCD器件氧化铟锡层无退火工艺研究[J]. 液晶与显示, 2014,29(1): 55-59 DOI：

ZHANG Jia-xiang, LU Kai, GUO Jian, JIANG Xiao-hui, CUI Yu-lin, WANG Liang, YAN Chang-jiang, QU Lian-jie, CHEN Xu, MIN Tai-ye, SU Shun-kang. Anneal skip of ITO layer in TFT-LCD[J]. , 2014,29(1): 55-59 DOI：

摘要

对TFT-LCD器件氧化铟锡（ITO）层无退火新工艺进行了深入研究，通过将氧化铟锡相变与聚酰亚胺（PI）膜固化过程同步进行，简化了工艺过程，节约了生产成本。采用无退火工艺氧化铟锡膜层的平均电阻值和膜层透过率与传统高温退火工艺下基本相同，可以实现低的电阻值和高的透过率。无退火工艺下PI膜表面平整均匀，氧化铟锡膜与PI膜界面结合良好，无鼓包、麻点等，也没有反应产物生成；经过TFT特性测试发现，无退火工艺比高温退火工艺条件下，无论暗态还是光照状态，开电流没有明显区别，漏电流可降低44%；通过无退火工艺和传统高温退火工艺制备的液晶显示屏的

特性相同。

Abstract

This paper makes a deep research on the new technology of anneal skip process for the TFT-LCD device. The anneal skip process can simplify the process and decrease the cost of production by the synchronization of ITO transformation and PI film curing. Using the anneal skip process

the average resistance of ITO layer and the transmittance of the film were the same as that of the traditional high temperature anneal process. A low resistance and a high transmittance could be realized. The surface of PI film was smooth.There was a good interface between the ITO layer and the PI film;no drum kit

pits and reaction products appeared. At dark or photo state

of TFT using the anneal skip process was the same as that using the high temperature process

but

off

had a decrease by 44%. The

characteristic of panel using the anneal skip process and the high temperature anneal process were the same.

关键词

Keywords

references

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