Kai Y U.TFT-LCDs as the future leading role in FPD//Process of the International Workshop on the Physics of Semiconductor Devices, Kobe:Ukai Display Device Institute, 2007:29-34.[2] 谷至华.薄膜晶体管(TFT) 阵列制造技术[M].上海:复旦大学出版社, 2007:67-69. Gu Z H.Thin Film Transistor Array Manufacturing Technology[M].Shanghai: Fudan University Press, 2007:67-69. (in Chinese)[3] Li L, Qin W, Xue J S, et al.Analysis of TFT array erosion defect[J].Chin. J. Liquid Crystals and Displays, 2010, 25(1):29-33.[4] Song J H, Kwon D J, Kim S G.Advanced four-mask process architecture for the a-Si TFT array manufacturing method[J].SID Symposium Digest of Technical Papers, 2002, 3(1): 1038-1041.[5] Li C M, Tian L H, Xu Z, et al.Sputtering of W-Mo alloy under ion bombardment[J].Transactions of Nonferrous Metals Society of China, 1999, 12(3):629-633.[6] 李远士, 牛焱, 吴维径. 金属材料的高温氯化腐蚀[J]. 腐蚀科学与防护技术, 2000, 12(1):41-44. Li Y S, Niu Y, Wu W J.Metal merials, high-temperature chloride corrosion[J].2000, 12(1):41-44.(in Chinese)[7] Muhammad M H, Nairn M, Zhan Z B. Metal wet etch issues and effects in dual metal gate stack integration[J].Journal of the Electrochemical Society, 2006, 153(5):43-46.[8] Kang S, Efremov A, Yun, et al.Etching characteristics and mechanisms of Mo and Al2O3 thin films in O2、Cl2、Ar inductively coupled plasmas:effect of gas mixing ratios[J].Thin Solid Films, 2004:552(3):105-110.[9] Xiong S Z, Zhao Y. Al Ti alloy grid a-Si TFT study[J].Chin. J.Semiconductors, 1997, 18(10):771-775.[10] 谢晓强, 戴旭涵, 赵小林, 等. 反应离子刻蚀中的边缘效应及其补偿办法[J]. 真空电子技术, 2005, 12(2):41-44. Xie X Q, Dai X H, Zhao X L, et al.Reactive ion etching of edge effect and its compensation method[J]. Journal of vacuum electronic technology, 2005, 12(2):41-44.(in Chinese)[11] Zheng Z R, Chen Z W, Jiang D H, et al.Study on reactive ion etching of Si and SiNx in Cl2+SF6 mixtures[J].Advanced Display, 2008, 19(3): 48-50.[12] 刘翔, 王章涛, 崔祥彦, 等. 液晶阵列四次光刻工艺中光刻胶灰化工艺的研究[J]. 真空科学与技术学报, 2008, 28(4):291-293. Liu X, Wang Z T, Cui X Y, et al.Photoresist ashing in four-mask fabrication of thin film transistor crystal liquid[J]. Chin. J. Vacuum Science and Technology, 2008, 28(4):291-293.(in Chinese)[13] 张智胜. 超深亚微米物理设计中天线效应的消除[J]. 半导体技术, 2012, 37(6):429-432. Zhang Z S.Process antenna effect elimination in ultra deep submicron physical design[J].Semiconductor Technology, 2012, 37(6):429-432.(in Chinese)[14] 荀本鹏.大尺寸面板液晶显示屏阵列工艺中的金属钼刻蚀研究[D].成都:电子科技大学, 2007:62-70. Xun B H.Large size liquid crystal display panel array of molybdenum metal etching research[D].Chendu:University of Electronic Science and Technology, 2007:62-70.(in Chinese)[15] Baek K H, Yun S J, Park J M, et al.The role of Sulfur during Mo etching using SF6 and Cl2 gas chemistries[J].Journal of Materials Science Letters, 1998, 17(17):1483-1486.[16] 闫方亮, 沈世妃, 侯智, 等. a-Si厚度对TFT开关特性的影响[J]. 现代显示, 2011, 12(7):23-25. Yan F L, Shen S F, Hou Z, et al.Effect of a-Silicon thickness on TFT characteristic[J].Advanced Display, 2011, 12(7):23-25.(in Chinese)[17] 宋跃, 邹雪城. a-Si TFT亚阈特征参数与有源层的厚度效应[J]. 固体电子学研究与进展, 2004, 12(1):20-25. Song Y, Zou X C.a-Si TFT threshold characteristic parameters with the thickness of the active layer effect[J]. Journal of Solid State Electronics Research and Development, 2004, 12(1):20-25.(in Chinese)[18] 刘北平, 李晓良, 朱海波. 氯气基气体感应耦合等离子体刻蚀GaN的工艺[J]. 半导体学报, 2006, 27(7):1335-1338. Liu B P, Li X L, Zhu H B.Cl2 gases inductively coupled plasma etching process of GaN[J].Chin. J.Semiconductors, 2006, 27(7):1335-1338. (in Chinese)