Transparent Organic Light Emitting Diodes Using a Multilayer Oxide as a Composite Cathode

LIANG Tian-jing; ZHANG Fang-hai; DING Lei

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Transparent Organic Light Emitting Diodes Using a Multilayer Oxide as a Composite Cathode

Device Physics & Device Technology | 更新时间：2020-08-12

- Transparent Organic Light Emitting Diodes Using a Multilayer Oxide as a Composite Cathode
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 1, Pages: 43-46(2012)
- 作者机构：
  
  陕西科技大学电气与信息工程学院,陕西西安,710021
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383+.1
- Received：10 August 2011，
  
  Revised：06 September 2011，
  
  Published Online：15 February 2012，
  
  Published：15 February 2012
- 稿件说明：
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梁田静, 张方辉, 丁磊. 多层氧化物复合阴极透明OLED器件[J]. 液晶与显示, 2012,27(1): 43-46

LIANG Tian-jing, ZHANG Fang-hai, DING Lei. Transparent Organic Light Emitting Diodes Using a Multilayer Oxide as a Composite Cathode[J]. , 2012,27(1): 43-46
梁田静, 张方辉, 丁磊. 多层氧化物复合阴极透明OLED器件[J]. 液晶与显示, 2012,27(1): 43-46 DOI：

LIANG Tian-jing, ZHANG Fang-hai, DING Lei. Transparent Organic Light Emitting Diodes Using a Multilayer Oxide as a Composite Cathode[J]. , 2012,27(1): 43-46 DOI：

摘要

制备了一种采用多层氧化物复合阴极的透明OLED

器件结构为:ITO/ MoO

(10 nm) /NPB(60 nm)/Alq

(65 nm)/ Al(1 nm)/ MoO

(1 nm)/Al(

nm) /MoO

(30 nm)。所采用的复合阴极结构为MoO

/Al/ MoO

(MAM)

同时在复合阴极(MAM)与电子传输层(Alq

)中间插入一层厚度为1 nm的Al中间层

该薄Al层一方面提高了电极与有机层间界面的平整度

同时增强了电极的导电性;另一方面

在电子传输层与中间层Al薄膜之间形成了良好的欧姆接触

提高了电子的注入能力。改变MAM结构中Al的厚度

获得该透明OLEDs的最佳性能

在Al的厚度为18 nm时器件亮度最高

为2 297 cd/cm

。

Abstract

Transparent organic light emitting diodes are developed by using a multilayer oxide as a composite cathode. The device structure is ITO/ MoO

(10 nm)/NPB(60 nm)/Alq

(65 nm)/Al(1 nm)/MoO

(1 nm)/Al(

nm) /MoO

(30 nm). The composite cathode is MoO

/Al/MoO

(MAM). A thin Al layer (1 nm) was introduced as an interlayer between the Alq

electron transport layer and the MAM electrode. On the one hand

the thin Al layer improves the interface flatness between electrode and organic layers

while improving the conductivity of the electrode. On the other hand

electron injection was greatly improved by forming an Ohmic contact between the electron transport layer and a thin Al layer. Then the OLEDs optimum performance is obtained by changing the thickness of Al in MAM. With the Al thickness of 18 nm

the highest brightness 2 297cd/cm

is obtained.

关键词

Keywords

references

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Related Institution

School of Material Science & Engineering, Shaanxi University of Science & Technology

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陕西科技大学

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