Pin Effect on SiNx and a-Si Layer of Thin Film Transistor

WANG Shou-kun; SUN Liang; HAO Zhao-hui; ZHU Xia-ming; YUAN Jian-feng; LIN Cheng-wu

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Pin Effect on SiN_x and a-Si Layer of Thin Film Transistor

更新时间：2020-08-12

- Pin Effect on SiN_x and a-Si Layer of Thin Film Transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 5, Pages: 613-617(2012)
- 作者机构：
  
  北京京东方显示技术有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN87
- Received：23 May 2012，
  
  Revised：27 June 2012，
  
  Published：15 October 2012
- 稿件说明：
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王守坤, 孙亮, 郝昭慧, 朱夏明, 袁剑峰, 林承武. 基板支撑梢对TFT栅界面SiNx和a-Si成膜特性的影响[J]. 液晶与显示, 2012,(5): 613-617

WANG Shou-kun, SUN Liang, HAO Zhao-hui, ZHU Xia-ming, YUAN Jian-feng, LIN Cheng-wu. Pin Effect on SiNx and a-Si Layer of Thin Film Transistor[J]. , 2012,(5): 613-617
王守坤, 孙亮, 郝昭慧, 朱夏明, 袁剑峰, 林承武. 基板支撑梢对TFT栅界面SiNx和a-Si成膜特性的影响[J]. 液晶与显示, 2012,(5): 613-617 DOI：

WANG Shou-kun, SUN Liang, HAO Zhao-hui, ZHU Xia-ming, YUAN Jian-feng, LIN Cheng-wu. Pin Effect on SiNx and a-Si Layer of Thin Film Transistor[J]. , 2012,(5): 613-617 DOI：

摘要

采用等离子体增强化学气相沉积法(PECVD)制得氮化硅和氢化非晶硅薄膜

对PECVD设备中基板支撑梢区域的膜质进行了研究。结果显示基板支撑梢对氮化硅薄膜的影响是:基板支撑梢区域的膜厚(沉积速率)高于非基板支撑梢区域

氢含量及[SiH/NH]值高于非基板支撑梢;对氢化非晶硅薄膜的影响是:基板支撑梢区域的膜厚(沉积速率)小于非基板支撑梢区域

氢含量高于非基板支撑梢。并对成膜影响的机理进行了分析讨论。

Abstract

Silicon nitride thin films(SiN

) and hydrogenated amorphous silicon(a-Si:H)thin films were deposited by plasma enhanced chemical vapor deposition(PECVD)method. The effect of the PECVD pin on thin films was studied.The results show that SiN

thin films: thickness(dep. rate) about pin area is larger than that in no-pin area's; hydrogen content and [SiH/NH] about pin area is higher than that in no pin area's. However

a-Si:H thin films: thickness(dep. rate) about pin area is thinner than that in no pin area's; hydrogen content about pin area is higher than in no pin area's. The growth mechanism of thin films was discussed.

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references

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