Fabrication and Performance Research of Green Organic Light Emitting Device with MoO3 Hole Injection Layer

SHI Gao-fei; NIU Hong-lin; LV Wen-wu; HU Jun-tao

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Fabrication and Performance Research of Green Organic Light Emitting Device with MoO₃ Hole Injection Layer

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- Fabrication and Performance Research of Green Organic Light Emitting Device with MoO₃ Hole Injection Layer
- Chinese Journal of Liquid Crystals and Displays Vol. 27, Issue 2, Pages: 177-181(2012)
- 作者机构：
  
  1. 特种显示技术教育部重点实验室,特种显示技术国家工程实验室,现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
  2. 合肥工业大学仪器科学与光电工程学院,安徽合肥,230009
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383+.1
- Received：29 September 2011，
  
  Revised：09 January 2012，
  
  Published Online：15 April 2012，
  
  Published：15 April 2012
- 稿件说明：
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史高飞, 牛红林, 鲁文武, 胡俊涛. MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究[J]. 液晶与显示, 2012,(2): 177-181

SHI Gao-fei, NIU Hong-lin, LV Wen-wu, HU Jun-tao. Fabrication and Performance Research of Green Organic Light Emitting Device with MoO3 Hole Injection Layer[J]. , 2012,(2): 177-181
史高飞, 牛红林, 鲁文武, 胡俊涛. MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究[J]. 液晶与显示, 2012,(2): 177-181 DOI：

SHI Gao-fei, NIU Hong-lin, LV Wen-wu, HU Jun-tao. Fabrication and Performance Research of Green Organic Light Emitting Device with MoO3 Hole Injection Layer[J]. , 2012,(2): 177-181 DOI：

摘要

用真空热蒸镀的方法制备了绿光有机电致发光器件

并对其工艺流程进行了详细的描述。器件结构为ITO/MoO

(

nm)/N

N'-diphenyl-N

N'-bis(1-naphthyl)-(1

18-biphenyl)-4

4-diamine(NPB)(40 nm)/tris(8-hydroxyquinoline)aluminum(Alq

)(60 nm)/LiF(1 nm)/Al(150 nm)

其中

5 nm。实验中

对ITO基片进行氧等离子体表面处理

能够有效减小ITO表面的接触角。通过对器件的光电性能测试

研究了MoO

作空穴注入层对有机电致发光器件性能的影响。实验结果表明

空穴注入层MoO

的最高占据分子轨道(HOMO)能级较好的与ITO功函数匹配

降低了空穴注入势垒

提高了器件的发光亮度和效率。当外加电压小于10 V时

器件的电流密度随外加电压的增加而增加

但变化不明显;当外加电压大于10 V时

器件的电流密度明显增强

发光色度几乎不随驱动电压的改变而改变

色坐标稳定在(0.36

0.55)附近。

Abstract

A green organic light emitting device(OLED) with the structure of ITO/MoO

(

nm)/N

N'-diphenyl-N

N'-bis(1-naphthyl)-(1

18-biphenyl)-4

4-diamine(NPB)(40 nm)/tris(8-hydroxyquinoline)aluminum(Alq

)(60 nm)/LiF(1 nm)/Al(150 nm) have been fabricated by vacuum deposition method

5 nm. The detail process has been described. It was found that the treatment on the surface of ITO substrates by oxygen plasma can effectively reduce the contact angle of the ITO surface in the experiments. By measuring and analyzing the performance of luminescence and electrical of device

the influences of the hole injection layer MoO

on device performance was investigated. Experimental results show that HOMO level of MoO

can reasonably match ITO work function

which reduces the hole-injecting barrier and improves the brightness and efficiency of device. When forward voltage is less than 10 V

the current density of device does not change significantly with the voltage increases; When the voltage is more than 10 V

the current density increases significantly. The chroma of device stabilizes in green light district of(0.36

0.55) with the changes of the driving electric voltage.

关键词

Keywords

references

Tang C W,VanSlyke S A. Organic electroluminescent diodes [J]. Appl. Phys. Lett.,1987,51(12):913-915.[2] Shi Jianmin,Tang C W. Doped organic electroluminescent devices with improved stability [J].Appl. Phys. Lett.,1997, 70(13):1665-1667.[3] 邵作叶,郑喜凤,陈宇.平板显示器中的OLED [J]. 液晶与显示, 2005,20(1):52-56.[4] Thomschke M,Nitsche R,Furno M,et al.Optimized efficiency and angular emission characteristics of white top emitting organic electroluminescent diodes [J].Appl. Phys. Lett., 2009,94(8):083303(1-3).[5] 高利岩,赵谡玲,徐征,等.空穴注入层对蓝色有机电致发光器件性能的影响 [J]. 光谱学与光谱分析, 2011,31(4):886-889.[6] 张靖磊,刘彭义,侯林涛,等.Nb2O5空穴注入层的引入对OLEDs性能的影响 [J]. 液晶与显示, 2008,23(1):11-15.[7] Zhang X W,Li J,Zhang L,et al. Improved performance of Si-based top-emitting organic light-emitting device using MoOx buffer layer [J].Synth. Met.,2010,160:788-790.[8] Lu D,Wu Y,Guo J,et al. Surface treatment of indium tin oxide by oxygen plasma for organic light emitting diodes [J].Mater Sci & Eng B,2003,97(2):141-144.[9] 刘陈. 有机电致发光器件的研究及优化设计.武汉:华中科技大学博士学位论文,2004.[10] 牟强,姚毅,张方辉,等.空穴注入层2T-2NATA对OLED器件性能的影响 [J]. 半导体技术, 2010,35(3):256-259.[11] 陈红征,施跃文,施敏敏,等.三(8-羟基喹啉)铝(Alq3)发光性能的调控 [J]. 材料科学与工程学报, 2006,24(4):614-617.[12] 候林涛,刘彭义,张靖磊,等.MoO3作空穴注入层的有机电致发光器件 [J]. 发光学报, 2007,15(2): 326-330.[13] 丁磊,张方辉,马颖. 一种新型双空穴注入层微腔OLED [J]. 液晶与显示, 2011,26(4):490-495.[14] 张静,张方辉,阎洪刚. HAT-CN作为空穴注入层的高效白色荧光有机电致发光二极管 [J]. 液晶与显示, 2011,26(4):496-500.

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特种显示技术教育部重点实验室,特种显示技术国家工程实验室,现代显示技术省部共建国家重点实验室培育基地

合肥工业大学化学工程学院高分子科学与工程系

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