Organic Dielectric Indium Zinc Oxide Thin Film Transistors

LI Gui-feng; FENG Jia-han; ZHOU Jun; ZHANG Qun

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Organic Dielectric Indium Zinc Oxide Thin Film Transistors

Device Technology & Physics | 更新时间：2020-08-12

- Organic Dielectric Indium Zinc Oxide Thin Film Transistors
- Chinese Journal of Liquid Crystals and Displays Vol. 25, Issue 4, Pages: 558-560(2010)
- 作者机构：
  
  复旦大学材料科学系上海,200433
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN321+.5
- Received：13 January 2010，
  
  Revised：25 April 2010，
  
  Published Online：20 August 2010，
  
  Published：20 August 2010
- 稿件说明：
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李桂锋, 冯佳涵, 周俊, 张群. 有机介质层铟锌氧化物薄膜晶体管[J]. 液晶与显示, 2010,25(4): 558-560

LI Gui-feng, FENG Jia-han, ZHOU Jun, ZHANG Qun. Organic Dielectric Indium Zinc Oxide Thin Film Transistors[J]. 液晶与显示, 2010,25(4): 558-560
李桂锋, 冯佳涵, 周俊, 张群. 有机介质层铟锌氧化物薄膜晶体管[J]. 液晶与显示, 2010,25(4): 558-560 DOI：

LI Gui-feng, FENG Jia-han, ZHOU Jun, ZHANG Qun. Organic Dielectric Indium Zinc Oxide Thin Film Transistors[J]. 液晶与显示, 2010,25(4): 558-560 DOI：

摘要

利用直流磁控溅射方法在玻璃基板上室温制备非晶铟锌氧化物半导体薄膜

薄膜表面平整。采用旋涂法室温制备聚四乙烯苯酚有机介质层。以铟锌氧化物薄膜作为沟道层、聚四乙烯苯酚作为介质层

成功制备了顶栅结构的薄膜晶体管。测试结果表明

所制备的薄膜晶体管具有饱和特性且为耗尽工作模式

薄膜晶体管的阈值电压为3.8 V

迁移率为25.4 cm

-1

开关比为10

。

Abstract

Amorphous indium zinc oxide thin films were prepared by direct current magnetron sputtering on glass substrates at room temperature. The organic dielectric layer poly(4-vinylphenol) were prepared by spin coating method. With IZO films as channel layers

poly(4-vinylphenol) as dielectric layers

thin film transistors were fabricated at room temperature

showing depleted mode operation with good saturation characteristics

threshold vol-tage of 3.8 V

mobility of 25.4 cm

-1

and on/off ratio of 10

. This shows organic dielectric layer indium zinc oxide thin film transistor can be prepared at low temperature.

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references

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Choi C G,Seo S J,Bae B S.Solution-processed indium-zinc oxide transparent thin-film transistors

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Choi J H,Khang D Y,Myoung J M.Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer

.Solid State Communications,2008,148:126-130.

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