Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties

SU Zan-jia; LIU Fei; LI Li; MO Fu-yao; JIN Shun-yu; CHEN Jun; DENG Shao-zhi; XU Ning-sheng

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Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties

Device Technology & Physics | 更新时间：2020-08-12

- Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties
- Chinese Journal of Liquid Crystals and Displays Vol. 25, Issue 4, Pages: 546-550(2010)
- 作者机构：
  
  1. 中山大学物理科学与工程技术学院光电材料与技术国家重点实验室
  2. 显示材料与技术广东省重点实验室,广东广州 5102775
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1;O462.4
- Received：25 January 2010，
  
  Revised：27 May 2010，
  
  Published Online：20 August 2010，
  
  Published：20 August 2010
- 稿件说明：
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苏赞加, 刘飞, 李力, 莫富尧, 金顺玉, 陈军, 邓少芝, 许宁生. 大面积超长氮化铝纳米线的制备及场发射特性研究[J]. 液晶与显示, 2010,25(4): 546-550

SU Zan-jia, LIU Fei, LI Li, MO Fu-yao, JIN Shun-yu, CHEN Jun, DENG Shao-zhi, XU Ning-sheng. Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties[J]. 液晶与显示, 2010,25(4): 546-550
苏赞加, 刘飞, 李力, 莫富尧, 金顺玉, 陈军, 邓少芝, 许宁生. 大面积超长氮化铝纳米线的制备及场发射特性研究[J]. 液晶与显示, 2010,25(4): 546-550 DOI：

SU Zan-jia, LIU Fei, LI Li, MO Fu-yao, JIN Shun-yu, CHEN Jun, DENG Shao-zhi, XU Ning-sheng. Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties[J]. 液晶与显示, 2010,25(4): 546-550 DOI：

摘要

报道了一种通过直接氮化Al粉合成氮化铝(AlN)纳米线的方法。该方法无需任何催化剂

并且可以获得大面积的单一形貌的AlN纳米线。所制备的AlN纳米线的平均长度超过20 m

直径为30~125 nm

是沿着[001]方向生长的单晶六方纤锌矿结构。场发射特性测试结果表明

AlN超长纳米线的开启电场为6.3 V/m

阈值电场为12.2 V/m

最大电流密度达1 440 A/cm

。这暗示着 AlN超长纳米线是一种很有潜力的冷阴极纳米材料。

Abstract

This paper reports a catalyst-free method to prepare ultra-long aluminum nitride nanowires in large-area by direct nitridation of Al powder. The as-prepared AlN nanowires have a mean length of over 20 m and a diameter ranging between 30 nm and 125 nm. The AlN nanowires are all single crystalline hexagonal wurtzite structures and grow along [001] direction. Field emission measurements show that the turn-on field and threshold field of AlN ultra-long nanowires is respectively 6.3 V/m and 12.2 V/m

and their maximum current density can reach 1 440 A/cm

which suggests it is a kind of promising cold cathode material candidate in field emission display (FED).

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