Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature

HU Chao-quan; WANG Xiao-yi; CHEN Hong; ZHU Jia-qi; HAN Jie-cai; ZHENG Wei-tao

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Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature

Material Physics & Chemistry | 更新时间：2020-08-12

- Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature
- Chinese Journal of Liquid Crystals and Displays Vol. 25, Issue 4, Pages: 515-518(2010)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所光学系统先进制造技术重点实验室,吉林长春,130033
  2. 哈尔滨工业大学复合材料与结构研究所, 黑龙江哈尔滨 150080,E-mail:huchaoquan0119@yahoo.com.cn
  3. 吉林大学材料科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.5
- Received：24 January 2010，
  
  Revised：02 April 2010，
  
  Published Online：20 August 2010，
  
  Published：20 August 2010
- 稿件说明：
移动端阅览
胡超权, 王笑夷, 陈红, 朱嘉琦, 韩杰才, 郑伟涛. 通过提高生长温度改善碳化锗薄膜的性能[J]. 液晶与显示, 2010,25(4): 515-518

HU Chao-quan, WANG Xiao-yi, CHEN Hong, ZHU Jia-qi, HAN Jie-cai, ZHENG Wei-tao. Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature[J]. 液晶与显示, 2010,25(4): 515-518
胡超权, 王笑夷, 陈红, 朱嘉琦, 韩杰才, 郑伟涛. 通过提高生长温度改善碳化锗薄膜的性能[J]. 液晶与显示, 2010,25(4): 515-518 DOI：

HU Chao-quan, WANG Xiao-yi, CHEN Hong, ZHU Jia-qi, HAN Jie-cai, ZHENG Wei-tao. Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature[J]. 液晶与显示, 2010,25(4): 515-518 DOI：

摘要

利用磁控溅射制备碳化锗(Ge

x)薄膜

系统地研究了生长温度(

)对所获薄膜成分及性能的影响并揭示了它们之间的内在关系。研究发现所有Ge

x薄膜样品均为非晶结构

随着

从60 ℃增加到500 ℃

膜中锗含量增加

而碳含量相对降低

这种成分的改变增加了膜中组成原子的平均质量

进而导致薄膜折射率从2.3增加到 4.3

这种折射率大范围连续可调的特性十分有利于Ge

x多层红外增透保护膜的设计和制备。此外研究还发现

随着

的增加

x膜中GeH和CH键逐渐减少

这不但显著减小了薄膜在~5.3 m和~3.4 m处的光吸收

而且显著提高了薄膜的硬度。这些结果表明

提高生长温度是调制Ge

x 薄膜成分、改善其光学和力学性能的有效途径。

Abstract

Germanium carbide (Ge

x) films have numerous attractive properties

which make them promising candidates for applications in the field of multilayer antireflection and protection coating of IR window. Although many investigations on the Ge

x films prepared by different deposition techniques have been performed

it is still difficult to summarize from the literature and thus to understand the relationships between the growth process and the film properties. Effects of experimental parameters such as growth temperature on the composition and properties of Ge

x films deposited by reactive magnetron sputtering are not well explored.

关键词

Keywords

references

Mackowski J M, Cimma B, Pignard R, et al. Rain erosion behavior of germanium carbide films grown on ZnS substrates

. Proc. SPIE, 1992, 1760 :201-209.

Kelly C J, Orr J S, Gordon H, et al. Application of germanium carbide in durable multilayer IR coatings

. Proc. SPIE, 1990, 1275: 122-134.

Sah R E, Wild C, Koidl P, et al. Amorphous hydrogenated carbon-germanium films for hard multiplayer IR optical coatings

. Proc. SPIE, 1990, 1275: 59-65.

马仙梅,荆海,王永刚,等. 氩气压强对溅射法制备Ga掺杂ZnO薄膜性能的影响

. 液晶与显示, 2009, 24(6):836-839 .

刘汉法, 张化福, 类成新,等. 利用射频磁控溅射法在柔性衬底上制备ZnO ∶ Zr透明导电薄膜

. 液晶与显示, 2009, 24(1):183-186.

李俊杰,王欣,卞海蛟,等.磁振溅射CN<em>x薄膜的附着力、粗糙度与衬底偏压的关系

. 发光学报, 2003, 24(3):305-308.

Hu Chaoquan, Zheng Bing, Zhu Jiaqi, et al. Increasing sp3 hybridized carbon atoms in germanium carbide films by increasing argon ion energy and germanium content

. J. Phys. D:Appl. Phys., 2010, 43 :135103(1-10).

Hu Chaoquan, Zheng Weitao, Tian Hongwei, et al. Effects of the chemical bonding on the optical and mechanical properties for germanium carbide films used as antireflection and protection coating of ZnS windows

. J. Physics- Condensed Matter, 2006, 18 :4231-4241.

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