ZHANG Wu-qin, GAO Jin-hai. Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate[J]. 液晶与显示, 2010,25(4): 519-522
ZHANG Wu-qin, GAO Jin-hai. Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate[J]. 液晶与显示, 2010,25(4): 519-522DOI:
Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate
The ceramic with a Ti mental layer was used as substrate by magnetron sputtering method. The carbide was made on the substrate by methane sputtering. The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The fabricated diamond aggregates were evaluated by Raman scattering spectroscopy
scanning better electron microscopy (SEM)
x-ray diffraction(XRD). The field emission properties were tested by using a diode structure in a vacuum chamber. A phosphor-coated indium tin oxide(ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates with carbide layer exhibited better electron emission properties than the ones without carbide layer.
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Fink R L, Tolt Z L , Yaniv Z.Carbon nano-/micro-structures in field emission: environmental stability and field enhancement distribution
.Surf. Coat. Technol.,1998,570(6):108-109.
梅山孩,冯涛,孙卓,等.电泳电压对碳纳米管沉积薄膜及阴极场发射特性影响
. 液晶与显示, 2008,23(4):478-482.
Chung S J, Moon J H, Park K C, et al.Field emission properties of the globe-like diamond microcrystalline aggregate films grown by MPCVD
.Appl. Phys.,1997,82(4):4047-4049.
曹连振,蒋红,宋航,等.热CVD法制备的碳纳米管线阵列的场发射特性
. 液晶与显示, 2009,24(1):43-46.
Zhu W, Konchanski G P, Jin S, et al.Electron field emission properties of diamond
. Appl. Phys. Lett., 1995,67(3):1153-1157.
Obraztsov A N, Pavlovsky L Y, Voldov A P.Characterization and application of thin film carbon nanotube material
.J. Vac. Sci. Technol. B,1999,17(2):659-665.
Pradhan D, Lee Y C.Pao C W, et al. Low temperature growth of ultrananocrystalline diamond film and its field emission properties
.Damond Relat. Mater.,2006,15 (11-12): 2001-2005.
Xu N S, Latham R V (Ed).High Voltage Vacuum Insulation
.London:Academic Press, 1995.
Tachibana T, Williams B E, Glass J T.Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. Ⅱ. Titanium contacts: A carbide-forming metal
. Phys. Rev. B, 1992,45(20):11975-11981.
Kiyota H, Higashi M, Kurosu T, et al. Field emission from amorphous carbon films grown by electrochemical deposition using methanol liquid.
.J. Appl. Phys., 2006,99(9):094903(1-6).
Gruen D M.Ultrananocrystalline Diamond Films from Fullerene Precursors