The light extraction plays an important role in LED encapsulation to obtain a high efficiency. The influence of package structure on LED light extraction was investigated by the TracePro simulation in this work.The results indicate that cavity shape almost have no effect on light extraction
ratio of light-out depends on the flare angle of cavity and salient of top surface
additionally
ratio of light-out is related to the height
reflectance and bus of a certain cavity. Overall
the structure of package truly affect the LED light extraction
hence package structure plays a significant role in packaging LED with high light extraction.
关键词
Keywords
references
Li Y Q, van Steen J E J, van Kervel J W H, et al. Luminescence properties of red-emitting M2Si5N8 ∶ Eu2+(M=Ca, Sr, Ba) LED conversion phosphors [J]. Journal of Alloys and Compounds, 2006,417:273-279.[2] Sun X Y, Zhang J H, Zhang X, et al. A green-yellow emitting -Sr2SiO4 ∶ Eu2+ phosphor for near ultraviolet chip white-light-emitting diode [J]. J. Rare Earths, 2008,26(3):421-424.[3] Zhu Chaofeng, Liang Xiaoluan,Yang Yunxia, et al. Luminescence properties of Tb doped and Tm/Tb/Sm co-doped glasses for LED applications [J]. J. Lumin., 2010,130(1):74-77.[4] Jung K Y, Kim J H, Kang Y C. Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application[J]. J. Lumin., 2009,129(6):615-619.[5] Niu Nanhui, Wang Huaibing, Liu Jianping, et al. Enhanced luminescence of In GaN/GaN multiple quantum wells by strain reduction [J]. Solid-State Electronics, 2007,51(6):860-864.[6] Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J]. Appl. Phys. Lett., 2004,85:855(1-3).[7] Huang H W, Kao C C, Chu J T, et al. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface[J]. IEEE Photonics Technology Lett., 2005,17(5): 983-985.[8] 严萍,李剑清.照明用LED光学系统的计算机辅助设计[J]. 半导体光电, 2004,25(3):181-200.