QIU Yan;WEI Ting-cun;WANG Jia;ZHENG Ran. Bandgap Reference with Adjustable Temperature Coefficient Based on Controlling PTAT Current[J]. 液晶与显示, 2010,25(1): 105-109
QIU Yan;WEI Ting-cun;WANG Jia;ZHENG Ran. Bandgap Reference with Adjustable Temperature Coefficient Based on Controlling PTAT Current[J]. 液晶与显示, 2010,25(1): 105-109DOI:
Bandgap Reference with Adjustable Temperature Coefficient Based on Controlling PTAT Current
同时通过设计专门电路提高了电源噪声抑制比。采用0.35 m CMOS工艺实现了该带隙基准源。仿真结果表明
基准电压的温度系数可在-1.76~+1.84 mV/℃范围内进行调节
低频时基准电压的PSRR达到-110 dB。
Abstract
A bandgap reference (BGR) with adjustable temperature coefficient was designed. By controlling PTAT current
the temperature coefficient of reference voltage can be adjusted from positive to negative. Compared to traditional method
a two-bipolar transistor structure is adopted which could reduce the circuit area in chip and improve the layout symmetry. Furthermore
an OPAMP circuit was designed to improve the PSRR. The reference voltage could be adjusted in a wider adjustment with 16 levels. Implemented with 0.35 m CMOS process
the Hspice simulation results showed that the temperature coefficient can be adjusted from -1.76 mV/℃ to +1.84 mV/℃ and the PSRR of the reference voltage reaches -110 dB at low frequency.