Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures

ZHAO Cun-lei; YANG Xiao-tian; WANG Chao; TANG Wei; YANG Jia; GAO Xiao-hong

doi:null

您当前的位置：

首页 >

文章列表页 >

Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures

Device Technology & Physics | 更新时间：2020-08-12

- Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures
- Chinese Journal of Liquid Crystals and Displays Vol. 25, Issue 5, Pages: 706-708(2010)
- 作者机构：
  
  吉林建筑工程学院电气与电子信息工程学院,吉林长春 130021
- 作者简介：
- 基金信息：
  
  Supported by Jilin Province Education Department "
- DOI：
  CLC： TN304.2+1
- Received：02 April 2010，
  
  Revised：13 May 2010，
  
  Published Online：28 September 2010，
  
  Published：20 October 2010
- 稿件说明：
移动端阅览
赵春雷, 杨小天, 王超, 唐魏, 杨佳, 高晓红. 不同氧气分压下的MOCVD法氧化锌薄膜生长[J]. 液晶与显示, 2010,25(5): 706-708

ZHAO Cun-lei, YANG Xiao-tian, WANG Chao, TANG Wei, YANG Jia, GAO Xiao-hong. Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures[J]. 液晶与显示, 2010,25(5): 706-708
赵春雷, 杨小天, 王超, 唐魏, 杨佳, 高晓红. 不同氧气分压下的MOCVD法氧化锌薄膜生长[J]. 液晶与显示, 2010,25(5): 706-708 DOI：

ZHAO Cun-lei, YANG Xiao-tian, WANG Chao, TANG Wei, YANG Jia, GAO Xiao-hong. Zinc Oxide Films Growth by MOCVD Under Different Oxygen Partial Pressures[J]. 液晶与显示, 2010,25(5): 706-708 DOI：

摘要

采用金属有机化学气相沉积方法

在不同氧气分压下

对硅衬底氧化锌薄膜材料生长做了研究。X-射线衍射方法对氧化锌薄膜的结晶质量做了比对测试。测试结果表明薄膜是沿着(002)方向生长。利用光荧光谱测试分析

对薄膜的发光特性做了研究

研究发现随着氧气分压增大

薄膜的紫外发光峰增强。通过原子力显微镜测试

对薄膜的表面形貌做了观察

发现结晶颗粒的平均粗糙度、均方根

以及平均直径随着氧气分压的增大呈现逐渐变小的趋势。

Abstract

ZnO thin films were grown on Si substrates by metal-organic chemical vapor deposition under different oxygen partial pressures

and the properties of the films were studied. It was found sharp diffraction peaks for ZnO (002) by X-ray diffraction

indicating the films were highly

-axis-oriented. The photoluminescence spectra of the ZnO films were studied. The surface morphology was studied by the atomic force microscopy. It was found that the ZnO films grew in a column-by-column process. The average grain size and the root-mean-square values for the film-surface morphology were decreasing with the increasing oxygen partial pressure.

关键词

Keywords

references

Aoki T, Hatanaka Y,Look D C.ZnO diode fabricated by excimer-laser doping

. Appl. Phys. Lett.,2000,76(22):3257(1-2).

Liu Y, Gorla C R, Liang S,et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

.Electron. Materm., 2000,29(1):69-74.

Carcia P F, McLean R S, Reilly M H,et al.Transparent ZnO thin film transistor fabricated by rf magnetro sputte-ring

.Appl. Phys. Lett., 2003, 82 (7):1117(1-3).

Chichibu S F, Yoshida T, Onuma T, et al.Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates

. Appl. Phys., 2002,91(2):874-878.

Zhang Y, Du G, Liu D, et al.Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

.Crystal Growth., 2002, 243 (3):439-443.

Tang Z K, Wong G K L, Yu P, et al.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

. Appl. Phys. Lett.,1998,72 (25):3270(1-3).

Cao H, Zhao Y G,Ong H C, et al.Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

. Appl. Phys. Lett.,1998,73 (25):3656(1-3).

Bagnall D M, Chen Y F, Zhu Z, et al.Optically pumped lasing of ZnO at room temperature

.Appl. Phys. Lett.,1997, 70(17):2230(1-3).

Ma Y, Du G T, Yang S R, et al.Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

. Chin. Phys. Lett., 2004,95 (11):6268-6272.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effects of ZnO nanostructures on the alignment control of liquid crystals

Influence of Different Doping Agent on Structure and Properties of PEDOT：PSS Films

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

Recent Research Developments of Doped ZnO Films

Progress in Ion Beam Modification of ZnO Thin Films

Related Author

Dong-yu ZHAO

Ying XIANG

Ran DUAN

Wei-hua BI

Feng-ping ZOU

LV Guo-qiang

HU Jun-tao

SHI Gao-fei

Related Institution

School of Information Engineering, Guangdong University of Technology

特种显示技术教育部重点实验室特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地

合肥工业大学仪器科学与光电工程学院

School of Physics and Electronics, Henan University, Kaifeng 475001, China,E-mail:xinanzhang@henu.edu.

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰