ZnO Films and Properties of ZnO-TFT

MA Xian-mei; JING Hai; MA Kai; WANG Long-yan; WANG Zhong-jian

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ZnO Films and Properties of ZnO-TFT

Device Technology & Physics | 更新时间：2020-08-12

- ZnO Films and Properties of ZnO-TFT
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 3, Pages: 393-395(2009)
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所,吉林,长春 130033,E-mail:maxianmei509@126.com
  3. 北方液晶工程研究开发中心,吉林长春,130031
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN321+.5;TN304.2+1
- Received：06 February 2009，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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马仙梅;荆海;马凯;王龙彦;王中健;. ZnO薄膜及ZnO-TFT的性能研究[J]. 液晶与显示, 2009,24(3): 393-395

MA Xian-mei;JING Hai;MA Kai;WANG Long-yan;WANG Zhong-jian;. ZnO Films and Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(3): 393-395
马仙梅;荆海;马凯;王龙彦;王中健;. ZnO薄膜及ZnO-TFT的性能研究[J]. 液晶与显示, 2009,24(3): 393-395 DOI：

MA Xian-mei;JING Hai;MA Kai;WANG Long-yan;WANG Zhong-jian;. ZnO Films and Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(3): 393-395 DOI：

摘要

采用MOCVD法在SiN

绝缘薄膜上生长了ZnO薄膜

通过X射线衍射与光致发光光谱表征了ZnO薄膜的质量。其结果是:XRD特征峰半高全宽0.176

光致发光仅有381.1 nm的发光峰

展现了ZnO薄膜光电特性的优势。制备了底栅型ZnO 薄膜晶体管

测试表明器件具有明显的场效应特性及饱和特性。

Abstract

ZnO films were grown on SiN

/glass substrate by the method of MOCVD. The qualities of the ZnO films were characterized by XRD and photo luminescence spectra. The results indicated that the full width at half height of XRD intrinsic peak is 0.176

and there is only a peak at 381.1 nm in the PL spectra. Both results exhibit the preponderance of our ZnO films in their photoelectricity characteristics. A bottom-gate-type ZnO-TFT was constructed successfully

and the measurements show that the device has an obvious field effect performance and a favorable saturation characteristic.

关键词

Keywords

references

. Du Guotong, Chang Yuchun, Zhang Yuantao, et al. ZnO thin films growth, characteristics and applications //ICSICT 04 Technical Proceeding,Beijing,China:IEEE:2004, 2361-2365.

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. Cheng Hua-Chi,Chen Chia-Fu, Lee Cheng-Chung.Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method [J]. Thin Solid Films,2006,498:142-145 .

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. Hoffman R L,Norris B J,Wager J F.ZnO-based transparent thin -film transistors [J]. Appl. Phys. Lett., 2003,82:733-735.

. 张新安,张景文,杨晓东,等.L-MBE法制备以ZnO为沟道层的薄膜晶体管 [J]. 半导体学报 ,2006,27(6):1501-1504.

. Park Sang-Hee Ko, Hwang Chi-Sun, Lee Jeong-IK, et al.Transparent ZnO thin film transistor array for the application of transparent AM-OLED display //SID 06 Digest,San Francisco,USA:SID,2006:25-28.

. Chiang H Q, Wager J F, Hoffman R L, et al. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J]. Appl. Phys. Lett., 2005,86:013503(1-3).

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