Exciton States and Interband Transitions in Wurtzite ZnO/MgxZn1-xO Coupled Quantum Dots

WEI Shu-yi; WEI Guo-hong; SUN Yong-can; ZHAO Jian-hua

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Exciton States and Interband Transitions in Wurtzite ZnO/Mg_xZn_1-xO Coupled Quantum Dots

Material Physics & Chemistry | 更新时间：2020-08-12

- Exciton States and Interband Transitions in Wurtzite ZnO/Mg_xZn_1-xO Coupled Quantum Dots
- Chinese Journal of Liquid Crystals and Displays Vol. 24, Issue 3, Pages: 340-344(2009)
- 作者机构：
  
  河南师范大学物理与信息工程学院, 河南新乡 453007, E-mail: wsy@henannu.edu.cn
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472+.3
- Received：01 November 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
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危书义;卫国红;孙永灿;赵建华. 耦合ZnO/MgxZn1-xO量子点中的激子态和带间光跃迁[J]. 液晶与显示, 2009,24(3): 340-344

WEI Shu-yi;WEI Guo-hong;SUN Yong-can;ZHAO Jian-hua. Exciton States and Interband Transitions in Wurtzite ZnO/MgxZn1-xO Coupled Quantum Dots[J]. 液晶与显示, 2009,24(3): 340-344
危书义;卫国红;孙永灿;赵建华. 耦合ZnO/MgxZn1-xO量子点中的激子态和带间光跃迁[J]. 液晶与显示, 2009,24(3): 340-344 DOI：

WEI Shu-yi;WEI Guo-hong;SUN Yong-can;ZHAO Jian-hua. Exciton States and Interband Transitions in Wurtzite ZnO/MgxZn1-xO Coupled Quantum Dots[J]. 液晶与显示, 2009,24(3): 340-344 DOI：

摘要

在有效质量近似和变分原理的基础上

考虑量子点的三维约束效应和内建电场

研究了ZnO/Mg

O耦合量子点中激子结合能、带间光跃迁能以及电子-空穴复合率随量子点结构参数(量子点高度和势垒层厚度)的变化。结果表明:激子结合能、带间光跃迁能和电子-空穴复合率随量子点高度或势垒层厚度的增加而降低。

Abstract

Within the framework of the effective-mass approximation

this paper presents a three-dimensional study of the exciton in ZnO/Mg

O vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. Our numerical results show that the exciton binding energy

the QD transition energy and the electron-hole recombination rate are reduced monotonically when the dot height and the barrier thickness between the coupled wurtzite ZnO QDs are increased.

关键词

Keywords

references

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